Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 38-41
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MOCVD法以NO气体为掺杂源生长p型ZnO薄膜

徐伟中 , 叶志镇 , 周婷 , 赵炳辉 , 朱丽萍 and 黄靖云

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Abstract: 采用金属有机化学气相沉积方法在玻璃上生长了掺氮的低电阻p型ZnO薄膜．实验使用NO和N2O共同作为氧源，且NO同时作为掺氮源，二乙基锌作为锌源．X射线衍射测试表明薄膜具有c轴择优取向的结构特性，二次离子质谱分析证实了氮被掺入了ZnO薄膜．通过优化锌源流量获得了最高空穴浓度为1.97×10/up18/cm－3，最低电阻率为3.02Ω·cm的ZnO薄膜．

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(1): 38-41
      MOCVD法以NO气体为掺杂源生长p型ZnO薄膜[J]. Journal of Semiconductors, 2005, In Press. MOCVD法以NO气体为掺杂源生长p型ZnO薄膜[J]. Chin. J. Semicond., 2005, 26(1): 38.Export: BibTex EndNote
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      MOCVD法以NO气体为掺杂源生长p型ZnO薄膜[J]. Journal of Semiconductors, 2005, In Press.

      MOCVD法以NO气体为掺杂源生长p型ZnO薄膜[J]. Chin. J. Semicond., 2005, 26(1): 38.
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      MOCVD法以NO气体为掺杂源生长p型ZnO薄膜

      • Received Date: 2015-08-19

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