| Citation: |
Bao Kuan, Fan Xiangning, Li Wei, Zhang Li, Wang Zhigong. A wideband LNA employing gate-inductive-peaking and noise-canceling techniques in 0.18 μm CMOS[J]. Journal of Semiconductors, 2012, 33(1): 015003. doi: 10.1088/1674-4926/33/1/015003
Bao K, Fan X N, Li W, Zhang L, Wang Z G. A wideband LNA employing gate-inductive-peaking and noise-canceling techniques in 0.18 μm CMOS[J]. J. Semicond., 2012, 33(1): 015003. doi: 10.1088/1674-4926/33/1/015003.
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A wideband LNA employing gate-inductive-peaking and noise-canceling techniques in 0.18 μm CMOS
doi: 10.1088/1674-4926/33/1/015003
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Abstract
This paper presents a wideband low noise amplifier (LNA) for multi-standard radio applications. The low noise characteristic is achieved by the noise-canceling technique while the bandwidth is enhanced by gate-inductive-peaking technique. High-frequency noise performance is consequently improved by the flattened gain over the entire operating frequency band. Fabricated in 0.18 μm CMOS process, the LNA achieves 2.5 GHz of -3 dB bandwidth and 16 dB of gain. The gain variation is within ± 0.8 dB from 300 MHz to 2.2 GHz. The measured noise figure (NF) and average IIP3 are 3.4 dB and -2 dBm, respectively. The proposed LNA occupies 0.39 mm2 core chip area. Operating at 1.8 V, the LNA drains a current of 11.7 mA. -
References
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