Fig. 1.
Plots of specific contact resistance versus annealing time at various temperatures.
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Deqi Wu, Wuchang Ding, Shanshan Yang, Rui Jia, Zhi Jin, Xinyu Liu. Optimization of ohmic contact for InP-based transferred electronic devices[J]. Journal of Semiconductors, 2014, 35(3): 036001. doi: 10.1088/1674-4926/35/3/036001
D Q Wu, W C Ding, S S Yang, R Jia, Z Jin, X Y Liu. Optimization of ohmic contact for InP-based transferred electronic devices[J]. J. Semicond., 2014, 35(3): 036001. doi: 10.1088/1674-4926/35/3/036001.
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Optimization of ohmic contact for InP-based transferred electronic devices
doi: 10.1088/1674-4926/35/3/036001
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Abstract
The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.2×10-7Ω·cm2 was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 5×1018 cm-3 in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380℃. -
References
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