Chin. J. Semicond. > 2006, Volume 27 > Issue 11 > 1994-1999

PAPERS

Characteristics of Groove-Gate MOSFETs

Cao Yanrong, Ma Xiaohua, Hao Yue and Yu Lei

+ Author Affiliations

PDF

Abstract: The groove- and planar-gate MOSFETs are compared and analyzed through simulation with the software SIVALCO,and the results show that the groove-gate MOSFETs can suppress short channel and hot carries effects.From the analysis of the field,we find that due to the corner effect,the performance of groove-gate MOSFETs is better than that of the planar.The groove-gate MOSFETs with 140nm channel length fabricated with a self-aligned process are tested,and the results effectively show the superiority of the groove-gate MOSFETs over the planar.

Key words: self-alignedgroove-gate MOSFETsshort channel effectshot carries effectscorner effect

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 3325 Times PDF downloads: 2289 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 November 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Cao Yanrong, Ma Xiaohua, Hao Yue, Yu Lei. Characteristics of Groove-Gate MOSFETs[J]. Journal of Semiconductors, 2006, In Press. Cao Y R, Ma X H, Hao Y, Yu L. Characteristics of Groove-Gate MOSFETs[J]. Chin. J. Semicond., 2006, 27(11): 1994.Export: BibTex EndNote
      Citation:
      Cao Yanrong, Ma Xiaohua, Hao Yue, Yu Lei. Characteristics of Groove-Gate MOSFETs[J]. Journal of Semiconductors, 2006, In Press.

      Cao Y R, Ma X H, Hao Y, Yu L. Characteristics of Groove-Gate MOSFETs[J]. Chin. J. Semicond., 2006, 27(11): 1994.
      Export: BibTex EndNote

      Characteristics of Groove-Gate MOSFETs

      • Received Date: 2015-08-18

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return