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Field Emission from Reaction Sputtering CN Films

Lin Hongfeng, 谢二庆 , Xie Erqing, Zhang Jun and Yan Xiaoqin

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Abstract: Carbon nitride (CN) films are deposited with reaction sputtering method.Nano-cone arrays are formed and distributed large areas on the surface of CN films with this method.CN films show excellent field emission behavior with a current density ~10mA/cm2 at 15.5V/μm due to their unique geometrical configurations.The field emission properties of the CN films can also be meliorated through circular survey experiments,which may lead to CN films be a great potential cold cathode materials for future field emission display.

Key words: reaction sputteringCN filmsfield emission

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

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      Lin Hongfeng, Xie Erqing, Zhang Jun, Yan Xiaoqin. Field Emission from Reaction Sputtering CN Films[J]. Journal of Semiconductors, 2006, In Press. Lin H F, Xie E Q, Zhang J, Yan X Q. Field Emission from Reaction Sputtering CN Films[J]. Chin. J. Semicond., 2006, 27(13): 211.Export: BibTex EndNote
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      Lin Hongfeng, Xie Erqing, Zhang Jun, Yan Xiaoqin. Field Emission from Reaction Sputtering CN Films[J]. Journal of Semiconductors, 2006, In Press.

      Lin H F, Xie E Q, Zhang J, Yan X Q. Field Emission from Reaction Sputtering CN Films[J]. Chin. J. Semicond., 2006, 27(13): 211.
      Export: BibTex EndNote

      Field Emission from Reaction Sputtering CN Films

      • Received Date: 2015-08-20

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