Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 408-413
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CONTENTS

表面态密度分布和源漏电阻对6H-SiC PMOS器件特性的影响

郜锦侠 , 张义门 , 张玉明 and 汤晓燕

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Key words: SiC, PMOS, 界面态, 阈值电压, 源漏电阻

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 408-413
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      • Received Date: 2015-08-19

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