SEMICONDUCTOR DEVICES

Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor

Liheng Zhu and Xingbi Chen

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 Corresponding author: Zhu Liheng, Email:zhu_li_heng@163.com

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Abstract: Novel reverse-conducting IGBT (RC-IGBT) with anti-parallel MOS controlled thyristor (MCT) is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anode-short effect is eliminated and the voltage snapback problem is solved. Furthermore, the snapback-free characteristics can be realized in novel RC-IGBT by a single cell with a width of 10 μm with more uniform current distribution. As numerical simulations show, compared with the conventional RC-IGBT, the forward conduction voltage is reduced by 35% while the reverse conduction voltage is reduced by 50% at J=150 A/cm2.

Key words: reverse conducting IGBTsnapback freeturn-off energyreverse-recovery charge



[1]
Rahimo M, Schlapbach U, Schnell R, et al. Realization of higher output power capability with the bi-mode insulated gate transistor (BIGT). Proc EPE, 2009: 1 http://ieeexplore.ieee.org/document/5279012/
[2]
Donnellan B T, Mawby P A, Rahimo M, et al. Introducing a 1200 V vertical merged IGBT and power MOSFET: the HUBFET. APEC, 2012: 152 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=6165812
[3]
Minato T, Aono S, Uryu K, et al. Making a bridge from SJ-MOSFET to IGBT via RC-IGBT structure concept for 600 V class SJ-RC-IGBT in a single chip solution. Proc ISPSD, 2012: 137 http://ieeexplore.ieee.org/document/6229042/
[4]
Takahashi H, Yamamoto A, Aono S, et al. 1200 V reverse conducting IGBT. Proc ISPSD, 2004: 133 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1332880
[5]
Zhu L, Chen X. A novel snapback-free reverse conducting IGBT with anti-parallel Shockley diode. Proc ISPSD, 2013: 261 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=6694436
[6]
Satoh K, lwagami T, Kawafuji H, et al. A new 3 A/600 V transfer mold IPM with RC (reverse conducting)-IGBT. Proc PCIM, 2006: 73 doi: 10.1111/j.1541-4337.2008.00049.x/full
[7]
Voss S, Niedernostheide F, Schulze H. Anode design variation in 1200-V trench field-stop reverse-conducting IGBTs. Proc ISPSD, 2008: 169 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4538925
[8]
Storasta L, Rahimo M, Bellini M, et al. The radial layout design concept for the bi-mode insulated gate transistor. Proc ISPSD, 2011: 56 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5890789
[9]
Mori M, Oyama K, Kohno Y, et al. A trench-gate high-conductivity IGBT (HiGT) with short-circuit capability. IEEE Trans Electron Devices, 2007, 54: 2011 doi: 10.1109/TED.2007.900007
[10]
MEDICI. Two dimensional device simulation program. ed. 2002. 2. 0, Synopsys Inc. , Fremont, CA, 2002
Fig. 1.  Schematic cross-sectional view of (a) the conventional RC-IGBT and (b) the novel RC-IGBT and its equivalent circuit.

Fig. 2.  Current flow lines of proposed RC-IGBT during its forward and reverse conduction states at $J$ $=$ 100 A/cm$^{2}$. (a) Forward conduction state. (b) Reverse conduction state.

Fig. 3.  Output characteristics of the conventional and proposed RCIGBTs.

Fig. 4.  Normalized current distributions of the conventional and proposed RC-IGBTs along the cut line of $y$ $=$ 100 $\mu $m (Top: $y$ $=$ 0 $\mu $m, bottom: $y$ $=$ 110 $\mu $m) at $J$ $=$ 100 A/cm$^{2}$.

Fig. 5.  Turn-off waveforms of the conventional and novel RC-IGBTs. $V_{\rm bus}$ $=$ 600 V, $L_{\rm load}$ $=$ 1 mH, $J$ $=$ 100 A/cm$^{2}$.

Fig. 6.  Reverse recovery characteristics of the conventional and the novel RC-IGBT. $J_{\rm f}$ $=$ 100 A/cm$^{2}$, $V_{\rm bus}$ $=$ 600 V, d$J_{\rm f}$/d$t$ $=$ 1000 A/$\mu$s$\cdot $cm$^{2}$.

Table 1.   Device specifications.

Table 2.   Key parameters extract from Fig. 5.

Table 3.   Key parameters extract from Fig. 6.

[1]
Rahimo M, Schlapbach U, Schnell R, et al. Realization of higher output power capability with the bi-mode insulated gate transistor (BIGT). Proc EPE, 2009: 1 http://ieeexplore.ieee.org/document/5279012/
[2]
Donnellan B T, Mawby P A, Rahimo M, et al. Introducing a 1200 V vertical merged IGBT and power MOSFET: the HUBFET. APEC, 2012: 152 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=6165812
[3]
Minato T, Aono S, Uryu K, et al. Making a bridge from SJ-MOSFET to IGBT via RC-IGBT structure concept for 600 V class SJ-RC-IGBT in a single chip solution. Proc ISPSD, 2012: 137 http://ieeexplore.ieee.org/document/6229042/
[4]
Takahashi H, Yamamoto A, Aono S, et al. 1200 V reverse conducting IGBT. Proc ISPSD, 2004: 133 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1332880
[5]
Zhu L, Chen X. A novel snapback-free reverse conducting IGBT with anti-parallel Shockley diode. Proc ISPSD, 2013: 261 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=6694436
[6]
Satoh K, lwagami T, Kawafuji H, et al. A new 3 A/600 V transfer mold IPM with RC (reverse conducting)-IGBT. Proc PCIM, 2006: 73 doi: 10.1111/j.1541-4337.2008.00049.x/full
[7]
Voss S, Niedernostheide F, Schulze H. Anode design variation in 1200-V trench field-stop reverse-conducting IGBTs. Proc ISPSD, 2008: 169 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4538925
[8]
Storasta L, Rahimo M, Bellini M, et al. The radial layout design concept for the bi-mode insulated gate transistor. Proc ISPSD, 2011: 56 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5890789
[9]
Mori M, Oyama K, Kohno Y, et al. A trench-gate high-conductivity IGBT (HiGT) with short-circuit capability. IEEE Trans Electron Devices, 2007, 54: 2011 doi: 10.1109/TED.2007.900007
[10]
MEDICI. Two dimensional device simulation program. ed. 2002. 2. 0, Synopsys Inc. , Fremont, CA, 2002
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    Received: 26 December 2013 Revised: 14 February 2014 Online: Published: 01 July 2014

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      Liheng Zhu, Xingbi Chen. Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor[J]. Journal of Semiconductors, 2014, 35(7): 074003. doi: 10.1088/1674-4926/35/7/074003 L H Zhu, X B Chen. Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor[J]. J. Semicond., 2014, 35(7): 074003. doi: 10.1088/1674-4926/35/7/074003.Export: BibTex EndNote
      Citation:
      Liheng Zhu, Xingbi Chen. Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor[J]. Journal of Semiconductors, 2014, 35(7): 074003. doi: 10.1088/1674-4926/35/7/074003

      L H Zhu, X B Chen. Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor[J]. J. Semicond., 2014, 35(7): 074003. doi: 10.1088/1674-4926/35/7/074003.
      Export: BibTex EndNote

      Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor

      doi: 10.1088/1674-4926/35/7/074003
      Funds:

      Project supported by the National Natural Science Foundation of China (No. 51237001) and the Fundamental Research Funds for the Central Universities of China (No. E022050205)

      the Fundamental Research Funds for the Central Universities of China E022050205

      the National Natural Science Foundation of China 51237001

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      • Corresponding author: Zhu Liheng, Email:zhu_li_heng@163.com
      • Received Date: 2013-12-26
      • Revised Date: 2014-02-14
      • Published Date: 2014-07-01

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