High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI

Ma Tongda; Tu Hailing; Shao Beiling; Liu Ansheng; Hu Guangyong

+ Author Affiliations

Article Navigation > Journal of Semiconductors > 2006 > 27(S1): 175-178

Ma Tongda, Tu Hailing, Shao Beiling, Liu Ansheng, Hu Guangyong. High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI[J]. Journal of Semiconductors, 2006, In Press. Ma T D, Tu H L, Shao B L, Liu A S, Hu G Y. High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI[J]. Chin. J. Semicond., 2006, 27(13): 175.Export: BibTex EndNote

Citation:

Ma Tongda, Tu Hailing, Shao Beiling, Liu Ansheng, Hu Guangyong. High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI[J]. Journal of Semiconductors, 2006, In Press.

Ma T D, Tu H L, Shao B L, Liu A S, Hu G Y. High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI[J]. Chin. J. Semicond., 2006, 27(13): 175.

Export: BibTex EndNote

Citation:

Ma T D, Tu H L, Shao B L, Liu A S, Hu G Y. High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI[J]. Chin. J. Semicond., 2006, 27(13): 175.

Export: BibTex EndNote

PDF( 0 KB)

High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI

National Engineering Research Center for Semiconductor Materials,General Research Institutefor Non-Ferrous Metals,Beijing 100088,China
National Center of Analysis and Testing for Nonferrous Metals and Electronic Materials,General Research Institute for No
National Engineering Research Center for Semiconductor Materials,General Research Institutefor Non-Ferrous Metals,Beijing 100088,China
National Center of Analysis and Testing for Nonferrous Metals and Electronic Materials,General Research Institute for Non-Ferrous Metals,Beijing 100088,China
National Center of Analysis and Testing for Nonferrous Metals and Electronic Materials,General Research Institute for Non-Ferrous Metals,Beijing 100088,China
National Center of Analysis and Testing for Nonferrous Metals and Electronic Materials,General Research Institute for Non-Ferrous Metals,Beijing 100088,China

Received Date: 2015-08-20

Abstract

Abstract

High resolution X-ray double-crystal diffraction (DCD),triple-axis diffraction (TAD),and TAD reciprocal lattice mapping (RLM) are employed to characterize Si/SiGe/Si heterostructures on SOI.The crystallographic misalignment within the layers,and Ge concentration and relaxation percentage of the SiGe layer are measured using TAD combined with DCD (TAD-DCD).TAD RLM can present necessary structural parameters of Si/SiGe/Si heterostructures on SOI.The strain in the thin Si capping layer is determined by high resolution TAD RLM.
- TAD-DCD,
- RLM,
- strained Si

FullText(HTML)

References(0)

References

High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI

Search

Share:

Article Metrics

History

Catalog

Email This Article

High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI

Abstract

References

Proportional views

Catalog

High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI

Search

Share:

Article Metrics

History

Catalog

Email This Article

High Resolution X-Ray Diffraction and Reciprocal LatticeMapping of Strained-Si/SiGe on SOI

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content