J. Semicond. > 2015, Volume 36 > Issue 9 > 093004, doi: 10.1088/1674-4926/36/9/093004
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SEMICONDUCTOR MATERIALS

Characteristics of sputtered Y-doped IZO thin films and devices

Dandan Wang, Qingpu Wang, Hanbin Wang, Xijian Zhang, Liwei Wu, Fujie Li and Shuai Yuan

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 Corresponding author: Wang Qingpu, wangqingpu@sdu.edu.cn

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Abstract: Yttrium-doped IZO (YIZO) thin films with different thickness have been prepared on soda-lime glass (SLG) and P-Si substrates by radio frequency magnetron sputtering at room temperature. Structural morphology and optical properties of the films have been investigated. YIZO thin film transistors (TFTs) with the bottom-gate-structure are fabricated on P-Si substrates. The output and transfer characteristics of YIZO-TFT have been studied. It has been found that all YIZO thin films prepared at room temperature are amorphous, and the YIZO TFTs exhibit n-channel depletion mode. YIZO-TFT with active layer thickness of 20 nm shows an on/off ratio over 105, a sub-threshold swing of 2.20 V/decade at a low operating voltage of -1.0 V, and saturation mobility values over 0.57 cm2/(V· s).

Key words: Y doped IZO, thin film, TFT, active layer



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Fig. 1.  (a) Cross section and (b) electrode structure of YIZO TFT.

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Fig. 2.  The XRD patterns of YIZO thin films with different thickness and the glass substrate.

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Fig. 3.  The surface SEM images of YIZO film and cross-section morphology with different film thickness of (a) 20 nm,(b) 30 nm,and (c) 40 nm.

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Fig. 4.  Transmittance spectra of YIZO thin films with different film thickness.

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Fig. 5.  Variation of ($h \nu \alpha)$$^{2}$ of YIZO thin films as a function of photon energy.

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Fig. 6.  Output curves of YIZO TFTs with different active layer thickness. (a) YIZO TFT A. (b) YIZO TFT B. (c) YIZO TFT C.

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Fig. 7.  Transfer characteristics of YIZO TFTs with different active layer thickness.

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Fig. 8.  The $I_{\rm DS}$$^{1/2}$-$V_{\rm GS}$ curves of YIZO TFTs with different active layer thickness.

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Fig. 9.  Energy band diagram of the n-channel depletion type YIZO TFT.

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Table 1.   The performance parameters of YIZO TFTs with different active layer thickness.

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    Received: 23 February 2015 Revised: Online: Published: 01 September 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(9): 093004
      Dandan Wang, Qingpu Wang, Hanbin Wang, Xijian Zhang, Liwei Wu, Fujie Li, Shuai Yuan. Characteristics of sputtered Y-doped IZO thin films and devices[J]. Journal of Semiconductors, 2015, 36(9): 093004. doi: 10.1088/1674-4926/36/9/093004 Dandan Wang and A Wang, Q P Wang, H B Wang, X J Zhang, L W Wu, F J Li, S Yuan. Characteristics of sputtered Y-doped IZO thin films and devices[J]. J. Semicond., 2015, 36(9): 093004. doi: 10.1088/1674-4926/36/9/093004.Export: BibTex EndNote
      Citation:
      Dandan Wang, Qingpu Wang, Hanbin Wang, Xijian Zhang, Liwei Wu, Fujie Li, Shuai Yuan. Characteristics of sputtered Y-doped IZO thin films and devices[J]. Journal of Semiconductors, 2015, 36(9): 093004. doi: 10.1088/1674-4926/36/9/093004

      Dandan Wang and A Wang, Q P Wang, H B Wang, X J Zhang, L W Wu, F J Li, S Yuan. Characteristics of sputtered Y-doped IZO thin films and devices[J]. J. Semicond., 2015, 36(9): 093004. doi: 10.1088/1674-4926/36/9/093004.
      Export: BibTex EndNote
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      Characteristics of sputtered Y-doped IZO thin films and devices

      doi: 10.1088/1674-4926/36/9/093004

      • School of Physics, Shandong University, Jinan 250100, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 51042006), the National Fund for Fostering Talents of Basic Science (No. J0730318), and the Foundation of Jinan City for University Innovation.

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      • Corresponding author: Wang Qingpu, wangqingpu@sdu.edu.cn
      • Received Date: 2015-02-23
      • Accepted Date: 2015-04-27
      • Published Date: 2015-01-25

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