| Citation: |
Yan Xuejian, Li Xu, Zhang Qun, Wang Weijun, Ji Xiaosong, Qiu Weimin, Hua Zhongyi. Electrical Characterization and Surface Modification of Organic Electric Bistable Material Based on STM[J]. Journal of Semiconductors, 2003, In Press.
Yan X J, Li X, Zhang Q, Wang W J, Ji X S, Qiu W M, Hua Z Y. Electrical Characterization and Surface Modification of Organic Electric Bistable Material Based on STM[J]. Chin. J. Semicond., 2003, 24(S1): 114.
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Electrical Characterization and Surface Modification of Organic Electric Bistable Material Based on STM
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Abstract
Characterization and surface modification of electric property are carried out on the organmetallic compleX AgTCNG thin film by scanning tunneling microscope ( STM). The resistance ofan organmetallic complex Ag-TCNG thin film Will be changed from a high resistance state to a loW resistance state When the bias voltage between the tip of STM and the bottom electrode is in excess ofa certain threshold voltage. The two states can be defined as S07 and S17 of a memory unit, respectiVely. Change of electric property is recorded in the conventional mode of STM. In order to avoid the effect of tunneling junction, which is not the intrinsic property of the material, betWeen the tip and the sample, a test in so-called Scontact7 mode of STM is carried out, and the result is compared with that in the conVentional mode. -
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