Chin. J. Semicond. > 2006, Volume 27 > Issue 8 > 1343-1346

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A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency

Yang Rong, Li Junfeng, Xu Qiuxia, Hai Chaohe, Han Zhengsheng and Qian He

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Abstract: This paper presents the fabrication and performance of a 0.18μm nMOSFET for RF applications.This device features a nitrided oxide/poly-silicon gate stack,a lightly-doped-drain source/drain extension,a retrograde channel doping profile,and a multiple-finger-gate layout,each of which is achieved with conventional semiconductor fabrication facilities.The 0.18μm gate length is obtained by e-beam direct-writing.The device is fabricated with a simple process flow and exhibits excellent DC and RF performance:the threshold voltage of 0.52V,the sub-threshold swing of 80mV/dec,the drain-induced-barrier-lowering factor of 69mV/V,the off-state current of 0.5nA/μm,the saturation drive current of 458μA/μm (for the 6nm gate oxide and the 3V supply voltage),the saturation transconductance of 212μS/μm,and the cutoff frequency of 53GHz.

Key words: structureprocessradio frequencynMOSFET

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2006

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      Yang Rong, Li Junfeng, Xu Qiuxia, Hai Chaohe, Han Zhengsheng, Qian He. A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency[J]. Journal of Semiconductors, 2006, In Press. Yang R, Li J F, Xu Q X, Hai C H, Han Z S, Qian H. A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency[J]. Chin. J. Semicond., 2006, 27(8): 1343.Export: BibTex EndNote
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      Yang Rong, Li Junfeng, Xu Qiuxia, Hai Chaohe, Han Zhengsheng, Qian He. A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency[J]. Journal of Semiconductors, 2006, In Press.

      Yang R, Li J F, Xu Q X, Hai C H, Han Z S, Qian H. A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency[J]. Chin. J. Semicond., 2006, 27(8): 1343.
      Export: BibTex EndNote

      A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency

      • Received Date: 2015-08-20

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