| Citation: |
Bu Jianhui, Bi Jinshun, Liu Mengxin, Han Zhengsheng. A total dose radiation model for deep submicron PDSOI NMOS[J]. Journal of Semiconductors, 2011, 32(1): 014002. doi: 10.1088/1674-4926/32/1/014002
Bu J H, Bi J S, Liu M X, Han Z S. A total dose radiation model for deep submicron PDSOI NMOS[J]. J. Semicond., 2011, 32(1): 014002. doi: 10.1088/1674-4926/32/1/014002.
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A total dose radiation model for deep submicron PDSOI NMOS
doi: 10.1088/1674-4926/32/1/014002
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Abstract
In most of the total dose radiation models, the drift of the threshold voltage and the degradation of the carrier mobility were only studied when the bulk potential is zero. However, the measured data indicate that the total dose effect is closely related to the bulk potential. In order to model the influence of the bulk potential on the total dose effect, we proposed a macro model. The change of the threshold voltage, carrier mobility and leakage current with different bulk potentials were all modeled in this model, and the model is well verified by the measured data based on the 0.35 μm PDSOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences, especially the part of the leakage current.-
Keywords:
- PDSOI,
- NMOS,
- total dose radiation model,
- bulk potential,
- leakage current
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References
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Proportional views
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