J. Semicond. > 2013, Volume 34 > Issue 11 > 114011, doi: 10.1088/1674-4926/34/11/114011
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SEMICONDUCTOR DEVICES

High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current

Zhen Dong, Cuiluan Wang, Hongqi Jing, Suping Liu and Xiaoyu Ma

+ Author Affiliations

 Corresponding author: Dong Zhen, Email:dongzhen@semi.ac.cn

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Abstract: To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure (GRIN-SCH) AlGaInAs/AlGaAs quantum well laser with an optimized ridge waveguide was fabricated. The threshold current was reduced to 8 mA. An output power of 76 mW was achieved at 100 mA current at room temperature, with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3°. The maximum single mode output power of the device reached as high as 450 mW.

Key words: semiconductor laser, low threshold, ridge waveguide, single mode



[1]
Chen Y K, Wu M C, Hobson W S, et al. High-power 980nm AlGaAs/InGaAs strained quantum-well laser grown by OMVPE. Photonics Technol Lett, 1991, 3(5):406 doi: 10.1109/68.93860
[2]
Lee J W, Devre M W, Reelfs B H, et al. Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas. J Vac SciTechnol A, 2000, 18(4):1220 doi: 10.1116/1.582329
[3]
Li Hui, Qu Yi, Gao Xin, et al. High performance 980nm single mode semiconductor lasers. Acta Armamentarii, 2010, 31(8):1110
[4]
Zhu Xiaopeng, Xu Zuntu, Zhang Jingming, et al. A single mode 980 nm InGaAs/GaAs/AlGaAs large optical cavity quantum well laser with low vertical divergence angle. Journal of Semiconductors, 2002, 23(4):342
[5]
Xu Zuntu, Yang Guowen, Zhang Jingming, et al. High efficiency Al-free 980nm InGaAs/InGaAsP/InGaP strained quantum well lasers. Journal of Semiconductors, 2000, 21(5):417
[6]
Yang GuoWen, Xu Junying, Xu Zuntu, et al. 980nm quantum well laser pumping sources for Er-doped fiber amplifier. Journal of Semiconductors, 1996, 17(12):940
[7]
Cao Sansong. Single-mode ridge-waveguide AIGaAs/GaAs quantum well lasers. Laser Technology, 1996, 20(3):177
[8]
Hocker G B, Burns W K. Mode dispersion in diffused channel waveguides by the effective index method. Appl Opt, 1977, 16(1):113 doi: 10.1364/AO.16.000113
[9]
Major J S, Plano W E, Welch D F, et al. Single-mode InGaAs-GaAs laser diodes operating at 980 nm. Electron Lett, 1991, 27(6):539 doi: 10.1049/el:19910339
[10]
Hobson W S, Chen Y K, Wu M C. InGaAs/AlGaAs ridge waveguide lasers utilizing an InGaP etch-stop layer. Semicond Sci Technol, 1992, 7:1425 doi: 10.1088/0268-1242/7/11/024
Fig. 1.  The ridge structure was considered as a three-layer planar waveguide

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Fig. 2.  (a) Relationship between etching depth and the ridge width which presents the cutoff condition of high order modes. (b) Variation of threshold current versus the etching depth at different ridge widths

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Fig. 3.  SEM image of the ridge waveguide structure

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Fig. 4.  (a) Output power-current characteristic of the device. (b) Far-field intensity distribution. (c) Emission spectrum of the device

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Fig. 5.  The horizontal far-field intensity distribution with different output powers

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Table 1.   Optimized parameters and simulated result of the designed structure
[1]
Chen Y K, Wu M C, Hobson W S, et al. High-power 980nm AlGaAs/InGaAs strained quantum-well laser grown by OMVPE. Photonics Technol Lett, 1991, 3(5):406 doi: 10.1109/68.93860
[2]
Lee J W, Devre M W, Reelfs B H, et al. Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas. J Vac SciTechnol A, 2000, 18(4):1220 doi: 10.1116/1.582329
[3]
Li Hui, Qu Yi, Gao Xin, et al. High performance 980nm single mode semiconductor lasers. Acta Armamentarii, 2010, 31(8):1110
[4]
Zhu Xiaopeng, Xu Zuntu, Zhang Jingming, et al. A single mode 980 nm InGaAs/GaAs/AlGaAs large optical cavity quantum well laser with low vertical divergence angle. Journal of Semiconductors, 2002, 23(4):342
[5]
Xu Zuntu, Yang Guowen, Zhang Jingming, et al. High efficiency Al-free 980nm InGaAs/InGaAsP/InGaP strained quantum well lasers. Journal of Semiconductors, 2000, 21(5):417
[6]
Yang GuoWen, Xu Junying, Xu Zuntu, et al. 980nm quantum well laser pumping sources for Er-doped fiber amplifier. Journal of Semiconductors, 1996, 17(12):940
[7]
Cao Sansong. Single-mode ridge-waveguide AIGaAs/GaAs quantum well lasers. Laser Technology, 1996, 20(3):177
[8]
Hocker G B, Burns W K. Mode dispersion in diffused channel waveguides by the effective index method. Appl Opt, 1977, 16(1):113 doi: 10.1364/AO.16.000113
[9]
Major J S, Plano W E, Welch D F, et al. Single-mode InGaAs-GaAs laser diodes operating at 980 nm. Electron Lett, 1991, 27(6):539 doi: 10.1049/el:19910339
[10]
Hobson W S, Chen Y K, Wu M C. InGaAs/AlGaAs ridge waveguide lasers utilizing an InGaP etch-stop layer. Semicond Sci Technol, 1992, 7:1425 doi: 10.1088/0268-1242/7/11/024

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    Received: 10 May 2013 Revised: 04 June 2013 Online: Published: 01 November 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(11): 114011
      Zhen Dong, Cuiluan Wang, Hongqi Jing, Suping Liu, Xiaoyu Ma. High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current[J]. Journal of Semiconductors, 2013, 34(11): 114011. doi: 10.1088/1674-4926/34/11/114011 Z Dong, C L Wang, H Q Jing, S P Liu, X Y Ma. High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current[J]. J. Semicond., 2013, 34(11): 114011. doi: 10.1088/1674-4926/34/11/114011.Export: BibTex EndNote
      Citation:
      Zhen Dong, Cuiluan Wang, Hongqi Jing, Suping Liu, Xiaoyu Ma. High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current[J]. Journal of Semiconductors, 2013, 34(11): 114011. doi: 10.1088/1674-4926/34/11/114011

      Z Dong, C L Wang, H Q Jing, S P Liu, X Y Ma. High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current[J]. J. Semicond., 2013, 34(11): 114011. doi: 10.1088/1674-4926/34/11/114011.
      Export: BibTex EndNote
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      High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current

      doi: 10.1088/1674-4926/34/11/114011

      • National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      the National Military Electronic Component Program of China 1107XG0700

      Project supported by the National Military Electronic Component Program of China (No. 1107XG0700)

      More Information
      • Corresponding author: Dong Zhen, Email:dongzhen@semi.ac.cn
      • Received Date: 2013-05-10
      • Revised Date: 2013-06-04
      • Published Date: 2013-11-01

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