| Citation: |
Li Xiaoting, Wang Tao, Wang Jingwei, Wang Yiding, Yin Jingzhi, Sai Xiaofeng, Gao Hongkai, Zhang Zhiyong. Growth and Characterisation of InAsSb Ternary Layers on (101) GaSb Substrates by LP-MOCVD[J]. Journal of Semiconductors, 2005, In Press.
Li X T, Wang T, Wang J W, Wang Y D, Yin J Z, Sai X F, Gao H K, Zhang Z Y. Growth and Characterisation of InAsSb Ternary Layers on (101) GaSb Substrates by LP-MOCVD[J]. Chin. J. Semicond., 2005, 26(12): 2298.
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Growth and Characterisation of InAsSb Ternary Layers on (101) GaSb Substrates by LP-MOCVD
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Abstract
InAsSb alloys are grown on n-(100) GaSb (Te-doped) and GaAs substrates by the MOCVD using TMIn,TMSb,and AsH3 sources.The influence of growth parameters such as temperature,V/III ratio,and buffer layer on the surface morphology and solid composition is studied.The surface morphology is observed by AFM and SEM.The As and Sb concentrations in the solid are characterized by electron microprobe analysis.The crystalline quality of the InAsSb epilayer is characterized by double-crystal X-ray rocking curve diffraction.The electrical properties are observed by the (Van der Pauw) Hall technique at room temperature.An InAsSb epitaxy layer with mirror-like surface and lattice mismatch of 0.4% is obtained. -
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