SEMICONDUCTOR INTEGRATED CIRCUITS

A high-speed power detector MMIC for E-band communication

Linpu Huang1, 2, Qiang Hu1 and Jian Zhang1,

+ Author Affiliations

 Corresponding author: Jian Zhang, Email:zj@mail.sim.ac.cn

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Abstract: An E-band high speed power detector MMIC using 0.1 μm pHEMT technology has been designed, manufactured and experimentally characterized. By employing a 4-way quadrature structure for phase cancellation, the first, second and third harmonics can be suppressed and the ripple at the output is minimized. Compared to conventional topology with a low pass filter, a short response time and high speed performance of demodulation can be reached. Simulated results indicate that the detector is capable of demodulating an on-off keying signal at a data rate up to 5 Gbps. The fabricated chip occupies 1×1.5 mm2 and the on-wafer measurement shows a return loss of less than -15 dB, responsivity better than 700 mV/mW and dynamic range of more than 25 dB over 70 to 90 GHz.

Key words: pHEMTpower detectorhigh-speedE-band



[1]
Woo B C, Jin L J, Chan E K, et al. A 60 GHz 5 Gb/s gain-boosting OOK demodulator in 0.13μm CMOS. IEEE Microwave Wireless Compon Lett, 2011, 21(2):101 doi: 10.1109/LMWC.2010.2096411
[2]
Uzunkol M, Shin W, Rebeiz G M. Design and analysis of a low-power 3-6-Gb/s 55-GHz OOK receiver with high-temperature performance. IEEE Trans Microwave Theory Tech, 2012, 60(10):3263 doi: 10.1109/TMTT.2012.2211381
[3]
Bao M Q, Chen J J, Kozhuharov R, et al. A high-speed power detector for D-band communication. IEEE Trans Microwave Theory Tech, 2014, 62(7):1515 doi: 10.1109/TMTT.2014.2321115
[4]
Oncu A, Fujishima M. 19.2 mW 2 Gbps CMOS pulse receiver for 60 GHz band wireless communication. IEEE Symposium on VLSI Circuits, 2008:158 https://www.researchgate.net/publication/260627119_98_mW_10_Gbps_Wireless_Transceiver_Chipset_With_D-Band_CMOS_Circuits
[5]
Lin F, Brinkhoff J, Kai K, et al. A low power 60 GHz OOK transceiver system in 90 nm CMOS with innovative on-chip AMC antenna. IEEE Asian Solid-State Circuits Conference, 2009:349 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5357167&filter%3DAND%28p_IS_Number%3A5357143%29
[6]
Zirath H, He Z X. Power detectors and envelope detectors in mHEMT MMIC-technology for millimeterwave applications Microwave Integrated Circuits Conference (EuMIC), 2010: 353 https://www.researchgate.net/publication/224186473_Power_detectors_and_envelope_detectors_in_mHEMT_MMIC-technology_for_millimeterwave_applications
[7]
Zhang J, Fusco V. A compact Ⅴ-band active SiGe power detector. Microwave Integrated Circuits Conference (EuMIC), 2012 https://www.researchgate.net/publication/261212519_A_compact_V-band_active_SiGe_power_detector
[8]
Hrobak M, Sterns M, Schramm M, et al. Planar zero bias Schottky diode detector operating in the E-and W-band. European Microwave Conference, 2013:179 http://ieeexplore.ieee.org/document/6686620/?reload=true&arnumber=6686620&punumber%3D6679726%26sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A6686544%29%26pageNumber%3D4
[9]
Radisic V, Leong K M K H, Zhang C B, et al. Demonstration of a micro-integrated sub-millimeter-wave pixel. IEEE Trans Microw Theory Technol, 2013, 61(8):2949 doi: 10.1109/TMTT.2013.2272379
[10]
Hoefle M, Penirschke A, Cojocari O, et al. Broadband zero-bias Schottky detector for E-field measurements up to 100 GHz and beyond. 38th International Conference on Infrared, Millimeter, and Terahertz Waves, 2013:1 https://www.researchgate.net/publication/261268838_Broadband_zero-bias_Schottky_detector_for_E-field_measurements_up_to_100_GHz_and_beyond
[11]
Dai Y B, Han K F, Yan N, et al. A high dynamic range linear RF power detector with a preceding LNA. J Semicond, 2012, 33(1):015005 doi: 10.1088/1674-4926/33/1/015005
[12]
Yao C F, Zhou M, Luo Y S, et al. Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes. J Semicond, 2015, 36(6):065002 doi: 10.1088/1674-4926/36/6/065002
[13]
Zhang J, Ye Y. W band high conversion gain, single balanced subharmonically gate pumped mixer with novel size-reduced marchand balun. IEEE International Microwave Symposium MTT-S, 2015 http://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?reload=true&arnumber=7166980
[14]
Ye Y, Zhang J, Sun X W. W-band travelingwave frequency doubler with output power of 9 dBm and power efficiency of 11.2%. IEEE Microwave Wireless Compon Lett, 2014, 24:704 doi: 10.1109/LMWC.2014.2340792
[15]
Mass S A. Nonlinear microwave and RF circuits. Boston:Artech House, 2003
Fig. 1.  Block diagram of the proposed detector.

Fig. 2.  Schematic of the proposed detector.

Fig. 3.  Drain current of a pHEMT ($2 \times 25$ $\mu $m) versus gate bias voltage and the second derivative of drain current with respect to gate bias voltage.

Fig. 4.  Simulated PD output at a data rate of 5 Gbps over a carrier frequency of 83 GHz.

Fig. 5.  Measurement setups for proposed detector.

Fig. 6.  Measured results of the proposed detector. (a) The measured results of linearity. (b) The measured voltage responsivity.

Table 1.   The phase of each harmonic generated by PD units.

Table 2.   Comparisons with other reported OOK detectors.

[1]
Woo B C, Jin L J, Chan E K, et al. A 60 GHz 5 Gb/s gain-boosting OOK demodulator in 0.13μm CMOS. IEEE Microwave Wireless Compon Lett, 2011, 21(2):101 doi: 10.1109/LMWC.2010.2096411
[2]
Uzunkol M, Shin W, Rebeiz G M. Design and analysis of a low-power 3-6-Gb/s 55-GHz OOK receiver with high-temperature performance. IEEE Trans Microwave Theory Tech, 2012, 60(10):3263 doi: 10.1109/TMTT.2012.2211381
[3]
Bao M Q, Chen J J, Kozhuharov R, et al. A high-speed power detector for D-band communication. IEEE Trans Microwave Theory Tech, 2014, 62(7):1515 doi: 10.1109/TMTT.2014.2321115
[4]
Oncu A, Fujishima M. 19.2 mW 2 Gbps CMOS pulse receiver for 60 GHz band wireless communication. IEEE Symposium on VLSI Circuits, 2008:158 https://www.researchgate.net/publication/260627119_98_mW_10_Gbps_Wireless_Transceiver_Chipset_With_D-Band_CMOS_Circuits
[5]
Lin F, Brinkhoff J, Kai K, et al. A low power 60 GHz OOK transceiver system in 90 nm CMOS with innovative on-chip AMC antenna. IEEE Asian Solid-State Circuits Conference, 2009:349 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5357167&filter%3DAND%28p_IS_Number%3A5357143%29
[6]
Zirath H, He Z X. Power detectors and envelope detectors in mHEMT MMIC-technology for millimeterwave applications Microwave Integrated Circuits Conference (EuMIC), 2010: 353 https://www.researchgate.net/publication/224186473_Power_detectors_and_envelope_detectors_in_mHEMT_MMIC-technology_for_millimeterwave_applications
[7]
Zhang J, Fusco V. A compact Ⅴ-band active SiGe power detector. Microwave Integrated Circuits Conference (EuMIC), 2012 https://www.researchgate.net/publication/261212519_A_compact_V-band_active_SiGe_power_detector
[8]
Hrobak M, Sterns M, Schramm M, et al. Planar zero bias Schottky diode detector operating in the E-and W-band. European Microwave Conference, 2013:179 http://ieeexplore.ieee.org/document/6686620/?reload=true&arnumber=6686620&punumber%3D6679726%26sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A6686544%29%26pageNumber%3D4
[9]
Radisic V, Leong K M K H, Zhang C B, et al. Demonstration of a micro-integrated sub-millimeter-wave pixel. IEEE Trans Microw Theory Technol, 2013, 61(8):2949 doi: 10.1109/TMTT.2013.2272379
[10]
Hoefle M, Penirschke A, Cojocari O, et al. Broadband zero-bias Schottky detector for E-field measurements up to 100 GHz and beyond. 38th International Conference on Infrared, Millimeter, and Terahertz Waves, 2013:1 https://www.researchgate.net/publication/261268838_Broadband_zero-bias_Schottky_detector_for_E-field_measurements_up_to_100_GHz_and_beyond
[11]
Dai Y B, Han K F, Yan N, et al. A high dynamic range linear RF power detector with a preceding LNA. J Semicond, 2012, 33(1):015005 doi: 10.1088/1674-4926/33/1/015005
[12]
Yao C F, Zhou M, Luo Y S, et al. Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes. J Semicond, 2015, 36(6):065002 doi: 10.1088/1674-4926/36/6/065002
[13]
Zhang J, Ye Y. W band high conversion gain, single balanced subharmonically gate pumped mixer with novel size-reduced marchand balun. IEEE International Microwave Symposium MTT-S, 2015 http://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?reload=true&arnumber=7166980
[14]
Ye Y, Zhang J, Sun X W. W-band travelingwave frequency doubler with output power of 9 dBm and power efficiency of 11.2%. IEEE Microwave Wireless Compon Lett, 2014, 24:704 doi: 10.1109/LMWC.2014.2340792
[15]
Mass S A. Nonlinear microwave and RF circuits. Boston:Artech House, 2003
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    Received: 19 December 2016 Revised: 09 March 2017 Online: Published: 01 August 2017

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      Linpu Huang, Qiang Hu, Jian Zhang. A high-speed power detector MMIC for E-band communication[J]. Journal of Semiconductors, 2017, 38(8): 085002. doi: 10.1088/1674-4926/38/8/085002 L P Huang, Q Hu, J Zhang. A high-speed power detector MMIC for E-band communication[J]. J. Semicond., 2017, 38(8): 085002. doi: 10.1088/1674-4926/38/8/085002.Export: BibTex EndNote
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      Linpu Huang, Qiang Hu, Jian Zhang. A high-speed power detector MMIC for E-band communication[J]. Journal of Semiconductors, 2017, 38(8): 085002. doi: 10.1088/1674-4926/38/8/085002

      L P Huang, Q Hu, J Zhang. A high-speed power detector MMIC for E-band communication[J]. J. Semicond., 2017, 38(8): 085002. doi: 10.1088/1674-4926/38/8/085002.
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      A high-speed power detector MMIC for E-band communication

      doi: 10.1088/1674-4926/38/8/085002
      Funds:

      the National High Technology Research and Development Program of China 2015AA01A704

      Project supported by the National High Technology Research and Development Program of China (No. 2015AA01A704)

      More Information
      • Corresponding author: Jian Zhang, Email:zj@mail.sim.ac.cn
      • Received Date: 2016-12-19
      • Revised Date: 2017-03-09
      • Published Date: 2017-08-01

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