SEMICONDUCTOR INTEGRATED CIRCUITS

A 430 mW 16 b 170 MS/s CMOS pipelined ADC with 77.2 dB SNR and 97.6 dB SFDR

Hui Zhang, Dan Li, Lei Wan, Hui Zhang, Haijun Wang, Yuan Gao, Feili Zhu, Ziqi Wang and Xuexin Ding

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 Corresponding author: Zhang Hui, Email:zhanghui@belling.com.cn

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Abstract: A 16-bit 170 MS/s pipelined ADC implemented in 0.18μm CMOS process is presented in this paper. An improved digital calibration method and a linearized sampling front-end are employed to achieve a high SFDR. The enlarged full scale range makes it possible to obtain a high SNR with smaller sampling capacitors, thus achieving higher speed and low power. This ADC attains an SNR of 77.2 dBFS, an SFDR of 97.6 dBc for a 10 MHz input signal, while preserving an SFDR>80 dBc up to 300 MHz input frequency. The ADC consumes 430 mW from a 1.8 V supply and occupies a 17 mm2 active area.

Key words: pipelined ADCcalibrationSHA-lessIF sampling



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Fig1.  (a) Block diagram of the proposed pipelined ADC. (b) Behavioral simulation result of the INL by taking account of the stage-1 capacitors mismatch.

Fig2.  Transfer curve of stage-1 with 17-level flash sub-ADC. For simplicity,only the right half is plotted.

Fig3.  Measured result of the stage-1 output swing while digitizing (a) 500 MHz and (b) 1 GHz input.

Fig4.  Front-end sampling network and nonlinear parasitics.

Fig5.  Residue amplifier used in stage-1.

Fig6.  Improved reference buffer.

Fig7.  Improved foreground calibration method.

Fig8.  (Color online) Die photomicrograph.

Fig9.  (Color online) ADC performance evaluation systems.

Fig10.  Measured 32768 points FFT with 10 MHz and 300 MHz input.

Fig11.  Measured SNR and SFDR versus input frequency.

Fig12.  Measured INL with 10 MHz input.

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Table 1.   Performance summary and comparison with the state-of-the-art designs.

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    Received: 14 July 2015 Revised: Online: Published: 01 March 2016

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      Hui Zhang, Dan Li, Lei Wan, Hui Zhang, Haijun Wang, Yuan Gao, Feili Zhu, Ziqi Wang, Xuexin Ding. A 430 mW 16 b 170 MS/s CMOS pipelined ADC with 77.2 dB SNR and 97.6 dB SFDR[J]. Journal of Semiconductors, 2016, 37(3): 035003. doi: 10.1088/1674-4926/37/3/035003 H Zhang, D Li, L Wan, H Zhang, H J Wang, Y Gao, F L Zhu, Z Q Wang, X X Ding. A 430 mW 16 b 170 MS/s CMOS pipelined ADC with 77.2 dB SNR and 97.6 dB SFDR[J]. J. Semicond., 2016, 37(3): 035003. doi: 10.1088/1674-4926/37/3/035003.Export: BibTex EndNote
      Citation:
      Hui Zhang, Dan Li, Lei Wan, Hui Zhang, Haijun Wang, Yuan Gao, Feili Zhu, Ziqi Wang, Xuexin Ding. A 430 mW 16 b 170 MS/s CMOS pipelined ADC with 77.2 dB SNR and 97.6 dB SFDR[J]. Journal of Semiconductors, 2016, 37(3): 035003. doi: 10.1088/1674-4926/37/3/035003

      H Zhang, D Li, L Wan, H Zhang, H J Wang, Y Gao, F L Zhu, Z Q Wang, X X Ding. A 430 mW 16 b 170 MS/s CMOS pipelined ADC with 77.2 dB SNR and 97.6 dB SFDR[J]. J. Semicond., 2016, 37(3): 035003. doi: 10.1088/1674-4926/37/3/035003.
      Export: BibTex EndNote

      A 430 mW 16 b 170 MS/s CMOS pipelined ADC with 77.2 dB SNR and 97.6 dB SFDR

      doi: 10.1088/1674-4926/37/3/035003
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      Project supported by the National Science and Technology Major Project(No.2009ZX01034-002-001-016).

      More Information
      • Corresponding author: Zhang Hui, Email:zhanghui@belling.com.cn
      • Received Date: 2015-07-14
      • Accepted Date: 2015-09-08
      • Published Date: 2016-01-25

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