| Citation: |
Zhang Qingzhao, Xie Changqing, Liu Ming, Li Bing, Zhu Xiaoli, Chen Baoqin. RF Bias Voltage in ICP Etch Systems[J]. Journal of Semiconductors, 2008, In Press.
Zhang Q Z, Xie C Q, Liu M, Li B, Zhu X L, Chen B Q. RF Bias Voltage in ICP Etch Systems[J]. J. Semicond., 2008, 29(5): 980.
Export: BibTex EndNote
|
RF Bias Voltage in ICP Etch Systems
-
Abstract
In order to understand the relationship between RF bias voltage on bottom electrode and other process parameters,we designed an experiment.The results indicated that the relationship varies depending on the other parameters' variation.The upper electrode RF power,the bottom electrode RF power,and gas pressure all distinctly affect this relationship.-
Keywords:
- plasma,
- RF bias voltage,
- ICP,
- dry etch
-
References
-
Proportional views
DownLoad: