| Citation: |
Zhou Jin, Hao Yilong, Wu Guoying, Yang Zhijian, Zhang Guoyi. Properties of Schottky Contact in MSM UV Detectors Based on AlGaN/GaN Heterostructure[J]. Journal of Semiconductors, 2005, In Press.
Zhou J, Hao Y L, Wu G Y, Yang Z J, Zhang G Y. Properties of Schottky Contact in MSM UV Detectors Based on AlGaN/GaN Heterostructure[J]. Chin. J. Semicond., 2005, 26(13): 247.
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Properties of Schottky Contact in MSM UV Detectors Based on AlGaN/GaN Heterostructure
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Abstract
AlGaN/GaN hetero-structure samples are grown on sapphire substrate by MOCVD method.Ti/Al/Ti/Au and Ni/Au metal films are sputtered on the samples,respectively.They are thermally annealed in the N2 gas for the different time and temperatures,and become ohmic contact and Schottky contact,respectively.Both I-V curves and C-V curves are discussed in term of the measurement results.The I-Vcurves have very good symmetry,butC-V curves slowly lose their symmetry with the annealing time increasing.MSM PD have good performance on the UV/Visible contrast and selectivity and the photoconductive gain effect is observed in the MSM PD UV response curves.-
Keywords:
- AlGaN/GaN,
- MSM,
- Schottky contact,
- UV response
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References
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Proportional views
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