| Citation: |
Li Ming, Zhang Haiying, Xu Jingbo, Fu Xiaojun. 200nm Gate Length Metamorphic In0.52Al0.48As／In0.6Ga0.4As HEMTs on GaAs Substrates with 110GHz fT[J]. Journal of Semiconductors, 2008, In Press.
Li M, Zhang H Y, Xu J B, Fu X J. 200nm Gate Length Metamorphic In0.52Al0.48As／In0.6Ga0.4As HEMTs on GaAs Substrates with 110GHz fT[J]. J. Semicond., 2008, 29(9): 1679.
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200nm Gate Length Metamorphic In0.52Al0.48As／In0.6Ga0.4As HEMTs on GaAs Substrates with 110GHz fT
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Abstract
200nm gate-length GaAs-based InAlAs/InGaAs MHEMTs are fabricated by MBE epitaxial material and EBL (electron beam lithography) technology.Ti/Pt/Au is evaporated to form gate metals.A T-shaped gate is produced using a novel PMMA/PMGI/PMMA trilayer resist structure to decrease parasitic capacitance and parasitic resistance of the gate.Excellent DC and RF performances are obtained and the transconductance (gm),maximum saturation drain current density (JDSS),threshold voltage (VT),current cut-off frequency (fT),and maximum oscillation frequency (fmax) of InAlAs/InGaAs MHEMTs are 510mS/mm,605mA/mm,-1.8V,110GHz,and 72GHz,respectively.-
Keywords:
- MHEMT,
- InAlAs/InGaAs,
- electron beam lithography,
- T-shaped gate
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References
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