| Citation: |
Yu Wei, Cui Shuangkui, Lu Wanbing, Wang Chunsheng. Plasma Enhanced Chemical Vapor Deposition and UltravioletLuminescence of Nanocrystalline 6H-SiC Thin Films[J]. Journal of Semiconductors, 2006, In Press.
Yu W, Cui S K, Lu W B, Wang C S. Plasma Enhanced Chemical Vapor Deposition and UltravioletLuminescence of Nanocrystalline 6H-SiC Thin Films[J]. Chin. J. Semicond., 2006, 27(10): 1767.
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Plasma Enhanced Chemical Vapor Deposition and UltravioletLuminescence of Nanocrystalline 6H-SiC Thin Films
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Abstract
Nanocrystalline silicon carbide (nc-SiC) thin films are fabricated on silicon (100) substrates by helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) in a high hydrogen dilution scheme.The structure and morphology of the deposited films are studied using X-ray diffraction,Fourier transform infrared spectroscopy,and scanning electron microscopy.The fluorescence of the samples is characterized by photoluminescence (PL).The nc-SiC films deposited at the substrate temperature of 500℃ show a strong infrared absorption peak,which is related to the TO vibration mode of SiC.X-ray diffraction analysis shows that the structure of the films is of the hexagonal 6H-SiC poly type.Intense ultraviolet emission is observed at room temperature under the excitation of a Xe lamp,and a PL peak shift is detected for the films deposited at different H2 flow rates.-
Keywords:
- nc-SiC,
- HW-PECVD,
- ultraviolet
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References
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