Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 17-21
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Nanoelectronics

Xue Zengguan, Zhang Qifeng, Song Jiaohua, Guo Dengzhu, Liang Xuelei, Shen Zhiyong, Chen Qing, Gao Song, Zhang Gengmin, Zhao Xingyu, Liu Weimin, Peng Lianmao, Wu Jinlei and Wu Quande

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Abstract: People are now endeavoring to develop nanoelectronic devices to the third generation of electron devices. Compared With their two predecessors vacuum electronic devices and microelectronic devices, the newly emerging nanoelectronic devices have such principal distinguishing characteristics as: ( 1) single-electron behaviors, ( 2) phase retaining, ( 3) quantum resistance (h /e2), ( 4) quantum bit (qubit) and ( 5) universal conductance fluctuation. The essential elements ofan electronic device are triodes with the capability of signal amplification. At present two types of nanoelectronic triode amplifiers, namely nanodot triode and carbon nanotube triode, have been proposed. The structures and properties of carbon-based nano-materials which are used for the constraction of future nanoelectronic triodes are discussed.

Key words: nanoelectronics,  single-electron tube,  quantum bit,  carbon nanotube,  bucky onion,  碳纳米管

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(S1): 17-21
      Xue Zengguan, Zhang Qifeng, Song Jiaohua, Guo Dengzhu, Liang Xuelei, Shen Zhiyong, Chen Qing, Gao Song, Zhang Gengmin, Zhao Xingyu, Liu Weimin, Peng Lianmao, Wu Jinlei, Wu Quande. Nanoelectronics[J]. Journal of Semiconductors, 2003, In Press. Xue Z G, Zhang Q F, Song J H, Guo D Z, Liang X L, Shen Z Y, Chen Q, Gao S, Zhang G M, Zhao X Y, Liu W M, Peng L M, Wu J L, Wu Quande. Nanoelectronics[J]. Chin. J. Semicond., 2003, 24(S1): 17.Export: BibTex EndNote
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      Xue Zengguan, Zhang Qifeng, Song Jiaohua, Guo Dengzhu, Liang Xuelei, Shen Zhiyong, Chen Qing, Gao Song, Zhang Gengmin, Zhao Xingyu, Liu Weimin, Peng Lianmao, Wu Jinlei, Wu Quande. Nanoelectronics[J]. Journal of Semiconductors, 2003, In Press.

      Xue Z G, Zhang Q F, Song J H, Guo D Z, Liang X L, Shen Z Y, Chen Q, Gao S, Zhang G M, Zhao X Y, Liu W M, Peng L M, Wu J L, Wu Quande. Nanoelectronics[J]. Chin. J. Semicond., 2003, 24(S1): 17.
      Export: BibTex EndNote
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      Nanoelectronics

      • Department of Electronics, Peking University, Beijing 100871, China,Department of Electronics, Peking University, Beijing 100872, China,Department of Electronics, Peking University, Beijing 100873, China,Department of Electronics, Peking University, Beijing 100874, China,Department of Electronics, Peking University, Beijing 100874, China,Department of Electronics, Peking University, Beijing 100874, China,Department of Electronics, Peking University, Beijing 100874, China,Department of Electronics, Peking University, Beijing 100874, China,Department of Electronics, Peking University, Beijing 100874, China,Department of Electronics, Peking University, Beijing 100874, China,Department of Electronics, Peking University, Beijing 100874, China,Department of Electronics, Peking University, Beijing 100874, China,Department of Electronics, Peking University, Beijing 100874, China and Department of Electronics, Peking University, Beijing 100874, China

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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