SEMICONDUCTOR TECHNOLOGY

A new cleaning process for the metallic contaminants on a post-CMP wafer's surface

Gao Baohong, Liu Yuling, Wang Chenwei, Zhu Yadong, Wang Shengli, Zhou Qiang and Tan Baimei

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Abstract: This paper presents a new cleaning process using boron-doped diamond (BDD) film anode electrochemical oxidation for metallic contaminants on polished silicon wafer surfaces. The BDD film anode electrochemical oxidation can efficiently prepare pyrophosphate peroxide, pyrophosphate peroxide can oxidize organic contaminants, and pyrophosphate peroxide is deoxidized into pyrophosphate. Pyrophosphate, a good complexing agent, can form a metal complex, which is a structure consisting of a copper ion, bonded to a surrounding array of two pyrophosphate anions. Three polished wafers were immersed in the 0.01 mol/L CuSO4 solution for 2 h in order to make comparative experiments. The first one was cleaned by pyrophosphate peroxide, the second by RCA (Radio Corporation of America) cleaning, and the third by deionized (DI) water. The XPS measurement result shows that the metallic contaminants on wafers cleaned by the RCA method and by pyrophosphate peroxide is less than the XPS detection limits of 1 ppm. And the wafer's surface cleaned by pyrophosphate peroxide is more efficient in removing organic carbon residues than RCA cleaning. Therefore, BDD film anode electrochemical oxidation can be used for microelectronics cleaning, and it can effectively remove organic contaminants and metallic contaminants in one step. It also achieves energy saving and environmental protection.

Key words: diamond film

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    Received: 18 August 2015 Revised: 31 May 2010 Online: Published: 01 October 2010

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      Gao Baohong, Liu Yuling, Wang Chenwei, Zhu Yadong, Wang Shengli, Zhou Qiang, Tan Baimei. A new cleaning process for the metallic contaminants on a post-CMP wafer's surface[J]. Journal of Semiconductors, 2010, 31(10): 106004. doi: 10.1088/1674-4926/31/10/106004 Gao B H, Liu Y L, Wang C W, Zhu Y D, Wang S L, Zhou Q, Tan B M. A new cleaning process for the metallic contaminants on a post-CMP wafer\'s surface[J]. J. Semicond., 2010, 31(10): 106004. doi: 10.1088/1674-4926/31/10/106004.Export: BibTex EndNote
      Citation:
      Gao Baohong, Liu Yuling, Wang Chenwei, Zhu Yadong, Wang Shengli, Zhou Qiang, Tan Baimei. A new cleaning process for the metallic contaminants on a post-CMP wafer's surface[J]. Journal of Semiconductors, 2010, 31(10): 106004. doi: 10.1088/1674-4926/31/10/106004

      Gao B H, Liu Y L, Wang C W, Zhu Y D, Wang S L, Zhou Q, Tan B M. A new cleaning process for the metallic contaminants on a post-CMP wafer\'s surface[J]. J. Semicond., 2010, 31(10): 106004. doi: 10.1088/1674-4926/31/10/106004.
      Export: BibTex EndNote

      A new cleaning process for the metallic contaminants on a post-CMP wafer's surface

      doi: 10.1088/1674-4926/31/10/106004
      • Received Date: 2015-08-18
      • Accepted Date: 2010-04-24
      • Revised Date: 2010-05-31
      • Published Date: 2010-10-05

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