| Citation: |
Zheng Yingkui, Liu Guoguo, He Zhijing, Liu Xinyu, Wu Dexin. 0.25μm Gate-Length AlGaN/GaN Power HEMTs on Sapphire with fT of 77GHz[J]. Journal of Semiconductors, 2006, In Press.
Zheng Y K, Liu G G, He Z J, Liu X Y, Wu D X. 0.25μm Gate-Length AlGaN/GaN Power HEMTs on Sapphire with fT of 77GHz[J]. Chin. J. Semicond., 2006, 27(6): 963.
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0.25μm Gate-Length AlGaN/GaN Power HEMTs on Sapphire with fT of 77GHz
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Abstract
MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated on sapphire substrates.A peak extrinsic transconductance of 250mS/mm and a unity current gain cutoff frequency (fT) of 77GHz are obtained for a 0.25μm gate-length single finger device.These power devices exhibit a maximum drain current density as high as 1.07A/mm.On-chip testing yielded a continuous-wave output power of 27.04dBm at 8GHz with an associated power-added efficiency of 26.5% for an 80×10μm device.-
Keywords:
- GaN,
- sapphire substrate,
- high electron mobility transistor
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References
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Proportional views
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