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Total dose effects on the matching properties of deep submicron MOS transistors

Yuxin Wang1, Rongbin Hu1, , Ruzhang Li1, Guangbing Chen1, Dongbing Fu2 and Wu Lu3

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 Corresponding author: Hu Rongbin, Email:hujiafu2000@126.com

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Abstract: Based on 0.18 μm MOS transistors, for the first time, the total dose effects on the matching properties of deep submicron MOS transistors are studied. The experimental results show that the total dose radiation magnifies the mismatch among identically designed MOS transistors. In our experiments, as the radiation total dose rises to 200 krad, the threshold voltage and drain current mismatch percentages of NMOS transistors increase from 0.55% and 1.4% before radiation to 17.4% and 13.5% after radiation, respectively. PMOS transistors seem to be resistant to radiation damage. For all the range of radiation total dose, the threshold voltage and drain current mismatch percentages of PMOS transistors keep under 0.5% and 2.72%, respectively.

Key words: radiationtotal doseMOSmismatch



[1]
Gao Bo, Yu Xuefeng, Ren Diyuan, et al. Total dose ionizing irradiation effects on a static random access memory field programmable gate array. Journal of Semiconductors, 2012, 33(3):034007 doi: 10.1088/1674-4926/33/3/034007
[2]
Bu Jianhui, Bi Jinshun, Liu Mengxin, et al. A total dose radiation model for deep submicron PDSOI NMOS. Journal of Semiconductors, 2011, 32(1):014002 doi: 10.1088/1674-4926/32/1/014002
[3]
Kauppila, Bhuva A V, Loveless B L, et al. Effect of negative bias temperature instability on the single event upset response of 40 nm flip-flops, IEEE Trans Nucl Sci, 2012, 59(6):2651 doi: 10.1109/TNS.2012.2224136
[4]
Cui Jiangwei, Xue Yaoguo, Yu Xuefeng, et al. Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs. Journal of Semiconductors, 2012, 33(1):014006 doi: 10.1088/1674-4926/33/1/014006
[5]
Guo Tianlei, Zhao Fazhan, Liu Gang, et al. Total dose radiation hardened PDSOI CMOS 64k SRAMs. Chinese Journal of Semiconductors, 2007, 28(8):1184
[6]
Liu MengXin, Han Zhengsheng, Li Duoli, et al. A total dose radiation hardened PDSOI CMOS 3-line to 8-line decoder. Journal of Semiconductors, 2008, 29(6):1036 http://www.jos.ac.cn/bdtxben/ch/reader/view_abstract.aspx?file_no=07110803&flag=1
[7]
Ding Lili, Yao Zhibin, Guo Hongxia, et al. Worst-case total dose radiation effect in deep-submicron SRAM circuits. Journal of Semiconductors, 2012, 33(7):075010 doi: 10.1088/1674-4926/33/7/075010
[8]
Kinget P R. Device mismatch and tradeoffs in the design of analog circuits. IEEE J Solid-State Circuits, 2005, 40(6):1212 doi: 10.1109/JSSC.2005.848021
[9]
Zeng T, Chen D. An order-statistics based matching strategy for circuit components in data converters. IEEE Trans Circuits Syst I:Regular Papers, 2013, 60(1):11 doi: 10.1109/TCSI.2012.2232991
[10]
Gray P R, Hurst P J, Lewis S H. Analysis and design of analog integrated circuit. 4th ed. New York:John Wiley & Sons, 2001
Fig. 1.  The transfer functions of a pair of NMOS transistors after different radiation total doses

Fig. 2.  The transfer functions of a pair of PMOS transistors after different radiation total doses

Fig. 3.  The functions of the gate current versus gate voltage of two NMOS transistors in a pair before and after radiation

Fig. 4.  The functions of the gate current versus gate voltage of a PMOS pair before and after radiation

Fig. 5.  The threshold voltage difference between the two NMOS transistors in a pair as a function of the radiation total dose

Fig. 6.  The threshold voltage difference between the two PMOS transistors in a pair as a function of the radiation total dose

Fig. 7.  The saturated drain current difference between the two NMOS transistors in a pair as a function of the radiation total dose

Fig. 8.  The saturated drain current difference between the two PMOS transistors in a pair as a function of the radiation total dose

Fig. 9.  Schematic diagram illuminating STI SiO2 layer

Table 1.   Information of samples

Table 2.   Summary of the experimental results

[1]
Gao Bo, Yu Xuefeng, Ren Diyuan, et al. Total dose ionizing irradiation effects on a static random access memory field programmable gate array. Journal of Semiconductors, 2012, 33(3):034007 doi: 10.1088/1674-4926/33/3/034007
[2]
Bu Jianhui, Bi Jinshun, Liu Mengxin, et al. A total dose radiation model for deep submicron PDSOI NMOS. Journal of Semiconductors, 2011, 32(1):014002 doi: 10.1088/1674-4926/32/1/014002
[3]
Kauppila, Bhuva A V, Loveless B L, et al. Effect of negative bias temperature instability on the single event upset response of 40 nm flip-flops, IEEE Trans Nucl Sci, 2012, 59(6):2651 doi: 10.1109/TNS.2012.2224136
[4]
Cui Jiangwei, Xue Yaoguo, Yu Xuefeng, et al. Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs. Journal of Semiconductors, 2012, 33(1):014006 doi: 10.1088/1674-4926/33/1/014006
[5]
Guo Tianlei, Zhao Fazhan, Liu Gang, et al. Total dose radiation hardened PDSOI CMOS 64k SRAMs. Chinese Journal of Semiconductors, 2007, 28(8):1184
[6]
Liu MengXin, Han Zhengsheng, Li Duoli, et al. A total dose radiation hardened PDSOI CMOS 3-line to 8-line decoder. Journal of Semiconductors, 2008, 29(6):1036 http://www.jos.ac.cn/bdtxben/ch/reader/view_abstract.aspx?file_no=07110803&flag=1
[7]
Ding Lili, Yao Zhibin, Guo Hongxia, et al. Worst-case total dose radiation effect in deep-submicron SRAM circuits. Journal of Semiconductors, 2012, 33(7):075010 doi: 10.1088/1674-4926/33/7/075010
[8]
Kinget P R. Device mismatch and tradeoffs in the design of analog circuits. IEEE J Solid-State Circuits, 2005, 40(6):1212 doi: 10.1109/JSSC.2005.848021
[9]
Zeng T, Chen D. An order-statistics based matching strategy for circuit components in data converters. IEEE Trans Circuits Syst I:Regular Papers, 2013, 60(1):11 doi: 10.1109/TCSI.2012.2232991
[10]
Gray P R, Hurst P J, Lewis S H. Analysis and design of analog integrated circuit. 4th ed. New York:John Wiley & Sons, 2001
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    Received: 19 October 2013 Revised: 18 January 2014 Online: Published: 01 June 2014

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      Yuxin Wang, Rongbin Hu, Ruzhang Li, Guangbing Chen, Dongbing Fu, Wu Lu. Total dose effects on the matching properties of deep submicron MOS transistors[J]. Journal of Semiconductors, 2014, 35(6): 064007. doi: 10.1088/1674-4926/35/6/064007 Y X Wang, R B Hu, R Z Li, G B Chen, D B Fu, W Lu. Total dose effects on the matching properties of deep submicron MOS transistors[J]. J. Semicond., 2014, 35(6): 064007. doi: 10.1088/1674-4926/35/6/064007.Export: BibTex EndNote
      Citation:
      Yuxin Wang, Rongbin Hu, Ruzhang Li, Guangbing Chen, Dongbing Fu, Wu Lu. Total dose effects on the matching properties of deep submicron MOS transistors[J]. Journal of Semiconductors, 2014, 35(6): 064007. doi: 10.1088/1674-4926/35/6/064007

      Y X Wang, R B Hu, R Z Li, G B Chen, D B Fu, W Lu. Total dose effects on the matching properties of deep submicron MOS transistors[J]. J. Semicond., 2014, 35(6): 064007. doi: 10.1088/1674-4926/35/6/064007.
      Export: BibTex EndNote

      Total dose effects on the matching properties of deep submicron MOS transistors

      doi: 10.1088/1674-4926/35/6/064007
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      Project supported by the National Key Laboratory Foundations (Nos. 9140C090104120C09032, 9140C090402110C0906)

      the National Key Laboratory Foundations 9140C090402110C0906

      the National Key Laboratory Foundations 9140C090104120C09032

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      • Corresponding author: Hu Rongbin, Email:hujiafu2000@126.com
      • Received Date: 2013-10-19
      • Revised Date: 2014-01-18
      • Published Date: 2014-06-01

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