SEMICONDUCTOR INTEGRATED CIRCUITS

A flat gain GaN MMIC power amplifier for X band application

Qin Ge1, , Xinyu Liu2, Yingkui Zheng2 and Chuan Ye1

+ Author Affiliations

 Corresponding author: Ge Qin, Email:geqin_001@163.com

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Abstract: A flat gain two-stage MMIC power amplifier with a 2.8 GHz bandwidth is successfully developed for X band frequency application based on a fully integrated micro-strip AlGaN/GaN HEMT technology on a semi-insulating SiC substrate. Designed with a binary-cluster matching structure integrated with RC networks and LRC networks, the developed power MMIC gets a very flat small signal gain of 15 dB with a gain ripple of 0.35 dB over 9.1-11.9 GHz at the drain bias of 20 V. These RC networks are very easy to improve the stability of used GaN HEMTs with tolerance to the MMIC technology. Inside the frequency range of 9-11.2 GHz where the measurement system calibrated, the amplifier delivers a pulsed output power of 39 dBm and an associated power added efficiency of about 20% at 28 V without saturation, as the available RF power is limited.

Key words: AlGaN/GaN HEMTsflat gainMMICpower amplifierX-band



[1]
Parikh P, Wu Y F, Chavarkar P, et al. AlGaN-GaN HEMTs:material, device, circuit technology and applications. IEEE International Symposium on Compound Semiconductors:Post-Conference Proceedings, 2003:164 doi: 10.1109/IMFEDK.2004.1566398
[2]
Boles T, Carlson D, Varmazis C, et al. Cost effective, high performance GaN technology. Asia-Pacific Microwave Conference Proceedings (APMC), 2010:131 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5728608
[3]
Li X, Chen W H, Feng Z H, et al. Design of dual-band tri-way GaN doherty power amplifier with frequency dependent power division. Electron Lett, 2012, 48(13):797 doi: 10.1049/el.2012.1203
[4]
Giofre R, Colantonio P, Giannini F. GaN broadband power amplifiers for terrestrial and space transmitters. 19th International Conference on Microwave Radar and Wireless Communications (MIKON), 2012:605 http://ieeexplore.ieee.org/document/6233596
[5]
Guljaev V I, Glazunov V V, Zykova G S, et al. X-band amplifier on GaN qmic with output power of 20 W. 21th International Crimean Conference on Microwave and Telecommunication Technology (CriMiCo), 2011:127 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6068865
[6]
Piotrowicz S, Ouarch Z, Chartier E, et al. 43 W, 52% PAE X-band AlGaN/GaN HEMTs MMIC amplifiers. IEEE MTT-S International Microwave Symposium Digest, 2010:505 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4674494
[7]
Ni F, Fang J, Feng H, et al. Design of an X-band high power solid state power amplifier based on GaN HEMT. International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2010:1916 https://www.infona.pl/resource/bwmeta1.element.ieee-art-000005524802
[8]
Palmour J W, Sheppard S T, Smith R P, et al. Wide bandgap semiconductor devices and MMICs for RF power applications. IEEE International Electron Devices Meeting Technical Digest, 2001:17.4.1 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=979517
[9]
Suijker E M, Sudow M, Fagerlind M, et al. GaN MMIC power amplifiers for S-band and X-band. 38th European Microwave Conference, 2008:297 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4751447
[10]
Jardel O, Mazeau J, Piotrowicz S, et al. GaN power MMICs for X-band T/R modules. European Microwave Integrated Circuits Conference (EuMIC), 2010:17 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=5613748
[11]
Krishnamurthy K, Wang D, Landberg B, et al. RLC matched GaN HEMT power amplifier with 2 GHz bandwidth. IEEE Compound Semiconductor Integrated Circuits Symposium, 2008:1 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4674497
[12]
Schuh P, Leberer R, Sledzik H, et al. 20 W GaN HPAs for next generation X-band T/R-modules. IEEE MTT-S International Microwave Symposium Digest, 2006:726 http://ieeexplore.ieee.org/document/4015007/
[13]
Peng M Z, Zheng Y K, Wei K, et al. X-band AlGaN/GaN HEMTs with high microwave power performance. Science China-Physics Mechanics & Astronomy, 2011, 54(3):442 http://kns.cnki.net/KCMS/detail/detail.aspx?filename=jgxg201103011&dbname=CJFD&dbcode=CJFQ
[14]
Wang D F, Yuan T T, Wei K, et al. Gate-structure optimization for high frequency power AlGaNGaN HEMTs. Journal of Semiconductors, 2010, 3(5):054003 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?flag=1&file_no=09102002&journal_id=bdtxbcn
[15]
Costrini C, Cetronio A, Romanini P, et al. 50 W X-band GaN MMIC HPA:effective power capability and transient thermal analysis. European Microwave Integrated Circuits Conference (EuMIC), 2010:408 https://www.infona.pl/resource/bwmeta1.element.ieee-art-000005613741
[16]
Imbornone J F, Murphy M T, Donahue R S, et al. New insight into subharmonic oscillation mode of GaAs power amplifiers under severe output mismatch condition. IEEE J Solid-State Circuits, 1997, 32(9):1319 doi: 10.1109/4.628734
[17]
Teeter D, Platzker A, Bourque R. A compact network for eliminating parametric oscillations in high power MMIC amplifiers. IEEE MTT-S International Microwave Symposium Digest, 1999:967. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=779547
[18]
Freitag R G, Lee S H, Krafcsik D M, et al. Stability and improved circuit modeling considerations for high power MMIC amplifiers. IEEE Microwave and Millimeter -Wave Monolithic Circuits Symposium Digest, 1988:125 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=197305
[19]
Ohtomo M. Stability analysis and numerical simulation of multidevice amplifiers. IEEE Trans Microw Theory Tech, 1993, 41(6):983 doi: 10.1109/22.238513
Fig. 1.  Cross-section of etched via hole in the SiC substrate

Fig. 2.  Photograph of the microstrip 10 $\times$ 100 $\mu $m power device.

Fig. 3.  Measured current gain and small signal power gain of a 10 $\times$ 100 $\mu $m AlGaN/GaN HEMT and extrapolated $f_{\rm T}$ and $f_{\rm max}$.

Fig. 4.  (a) The equivalent single ended schematic topology of the power MMIC. (b) Chip photograph of the X-band MMIC amplifier with a chip size of 4.0 $\times $ 3.0 mm$^{2}$

Fig. 5.  Measured $S$ parameters (magnitude) of the two-stage amplifier against frequency at a drain bias voltage of $V_{\rm ds}$ = 20 V

Fig. 6.  Measured pulsed output power performance of the two-stage MMIC at $V_{\rm ds}$ = 28 V at 10 GHz

Fig. 7.  Frequency performance of the power MMIC at $V_{\rm ds}$ = 28 V and $P_{\rm in}$ = 28 dBm.

[1]
Parikh P, Wu Y F, Chavarkar P, et al. AlGaN-GaN HEMTs:material, device, circuit technology and applications. IEEE International Symposium on Compound Semiconductors:Post-Conference Proceedings, 2003:164 doi: 10.1109/IMFEDK.2004.1566398
[2]
Boles T, Carlson D, Varmazis C, et al. Cost effective, high performance GaN technology. Asia-Pacific Microwave Conference Proceedings (APMC), 2010:131 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5728608
[3]
Li X, Chen W H, Feng Z H, et al. Design of dual-band tri-way GaN doherty power amplifier with frequency dependent power division. Electron Lett, 2012, 48(13):797 doi: 10.1049/el.2012.1203
[4]
Giofre R, Colantonio P, Giannini F. GaN broadband power amplifiers for terrestrial and space transmitters. 19th International Conference on Microwave Radar and Wireless Communications (MIKON), 2012:605 http://ieeexplore.ieee.org/document/6233596
[5]
Guljaev V I, Glazunov V V, Zykova G S, et al. X-band amplifier on GaN qmic with output power of 20 W. 21th International Crimean Conference on Microwave and Telecommunication Technology (CriMiCo), 2011:127 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6068865
[6]
Piotrowicz S, Ouarch Z, Chartier E, et al. 43 W, 52% PAE X-band AlGaN/GaN HEMTs MMIC amplifiers. IEEE MTT-S International Microwave Symposium Digest, 2010:505 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4674494
[7]
Ni F, Fang J, Feng H, et al. Design of an X-band high power solid state power amplifier based on GaN HEMT. International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2010:1916 https://www.infona.pl/resource/bwmeta1.element.ieee-art-000005524802
[8]
Palmour J W, Sheppard S T, Smith R P, et al. Wide bandgap semiconductor devices and MMICs for RF power applications. IEEE International Electron Devices Meeting Technical Digest, 2001:17.4.1 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=979517
[9]
Suijker E M, Sudow M, Fagerlind M, et al. GaN MMIC power amplifiers for S-band and X-band. 38th European Microwave Conference, 2008:297 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4751447
[10]
Jardel O, Mazeau J, Piotrowicz S, et al. GaN power MMICs for X-band T/R modules. European Microwave Integrated Circuits Conference (EuMIC), 2010:17 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=5613748
[11]
Krishnamurthy K, Wang D, Landberg B, et al. RLC matched GaN HEMT power amplifier with 2 GHz bandwidth. IEEE Compound Semiconductor Integrated Circuits Symposium, 2008:1 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4674497
[12]
Schuh P, Leberer R, Sledzik H, et al. 20 W GaN HPAs for next generation X-band T/R-modules. IEEE MTT-S International Microwave Symposium Digest, 2006:726 http://ieeexplore.ieee.org/document/4015007/
[13]
Peng M Z, Zheng Y K, Wei K, et al. X-band AlGaN/GaN HEMTs with high microwave power performance. Science China-Physics Mechanics & Astronomy, 2011, 54(3):442 http://kns.cnki.net/KCMS/detail/detail.aspx?filename=jgxg201103011&dbname=CJFD&dbcode=CJFQ
[14]
Wang D F, Yuan T T, Wei K, et al. Gate-structure optimization for high frequency power AlGaNGaN HEMTs. Journal of Semiconductors, 2010, 3(5):054003 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?flag=1&file_no=09102002&journal_id=bdtxbcn
[15]
Costrini C, Cetronio A, Romanini P, et al. 50 W X-band GaN MMIC HPA:effective power capability and transient thermal analysis. European Microwave Integrated Circuits Conference (EuMIC), 2010:408 https://www.infona.pl/resource/bwmeta1.element.ieee-art-000005613741
[16]
Imbornone J F, Murphy M T, Donahue R S, et al. New insight into subharmonic oscillation mode of GaAs power amplifiers under severe output mismatch condition. IEEE J Solid-State Circuits, 1997, 32(9):1319 doi: 10.1109/4.628734
[17]
Teeter D, Platzker A, Bourque R. A compact network for eliminating parametric oscillations in high power MMIC amplifiers. IEEE MTT-S International Microwave Symposium Digest, 1999:967. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=779547
[18]
Freitag R G, Lee S H, Krafcsik D M, et al. Stability and improved circuit modeling considerations for high power MMIC amplifiers. IEEE Microwave and Millimeter -Wave Monolithic Circuits Symposium Digest, 1988:125 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=197305
[19]
Ohtomo M. Stability analysis and numerical simulation of multidevice amplifiers. IEEE Trans Microw Theory Tech, 1993, 41(6):983 doi: 10.1109/22.238513
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    Received: 04 May 2014 Revised: 29 July 2014 Online: Published: 01 December 2014

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      Qin Ge, Xinyu Liu, Yingkui Zheng, Chuan Ye. A flat gain GaN MMIC power amplifier for X band application[J]. Journal of Semiconductors, 2014, 35(12): 125004. doi: 10.1088/1674-4926/35/12/125004 Q Ge, X Y Liu, Y K Zheng, C Ye. A flat gain GaN MMIC power amplifier for X band application[J]. J. Semicond., 2014, 35(12): 125004. doi: 10.1088/1674-4926/35/12/125004.Export: BibTex EndNote
      Citation:
      Qin Ge, Xinyu Liu, Yingkui Zheng, Chuan Ye. A flat gain GaN MMIC power amplifier for X band application[J]. Journal of Semiconductors, 2014, 35(12): 125004. doi: 10.1088/1674-4926/35/12/125004

      Q Ge, X Y Liu, Y K Zheng, C Ye. A flat gain GaN MMIC power amplifier for X band application[J]. J. Semicond., 2014, 35(12): 125004. doi: 10.1088/1674-4926/35/12/125004.
      Export: BibTex EndNote

      A flat gain GaN MMIC power amplifier for X band application

      doi: 10.1088/1674-4926/35/12/125004
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      • Corresponding author: Ge Qin, Email:geqin_001@163.com
      • Received Date: 2014-05-04
      • Revised Date: 2014-07-29
      • Published Date: 2014-12-01

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