Fig. 2.
SEM photograph of the CPW.
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| Citation: |
Yinghui Zhong, Yuming Zhang, Yimen Zhang, Yuxiong Cao, Hongfei Yao, Xiantai Wang, Hongliang Lü, Xinyu Liu, Zhi Jin. A W-band two-stage cascode amplifier with gain of 25.7 dB[J]. Journal of Semiconductors, 2013, 34(12): 125003. doi: 10.1088/1674-4926/34/12/125003
Y H Zhong, Y M Zhang, Y M Zhang, Y X Cao, H F Yao, X T Wang, H Lü, X Y Liu, Z Jin. A W-band two-stage cascode amplifier with gain of 25.7 dB[J]. J. Semicond., 2013, 34(12): 125003. doi: 10.1088/1674-4926/34/12/125003.
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A W-band two-stage cascode amplifier with gain of 25.7 dB
doi: 10.1088/1674-4926/34/12/125003
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Abstract
A W-band two-stage amplifier MMIC has been developed using a fully passivated 2×20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor (HEMT) technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leading to a compact chip-size of 1.85×0.932 mm2 and an excellent small-signal gain of 25.7 dB at 106 GHz. Additionally, an inter-digital coupling capacitor blocks low-frequency signal, thereby enhancing the stability of the amplifier. The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.-
Keywords:
- cascode,
- coplanar waveguide,
- HEMT,
- gate-length
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References
[1] Mei X B, Lin C H, Lee L J, et al. A W-band InGaAs/InAlAs/InP HEMT low-noise amplifier MMIC with 2.5 dB noise figure and 19.4 dB gain at 94 GHz. 20th International Conference on Indium Phosphide and Related Materials (IPRM), 2008:1 http://ieeexplore.ieee.org/document/4702933/authors[2] Liu P H, Yoshida W, Lee J, et al. High gain G-band MMIC amplifiers based on sub-50 nm gate. International Conference on Indium Phosphide and Related Materials Conference Proceedings, 2007:22 http://ieeexplore.ieee.org/document/4265869/authors[3] Kallfass I, Tessmann A, Massler H, et al. A 300 GHz active frequency-doubler and integrated resistive mixer MMIC. Proceedings of the 4th European Microwave Integrated Circuits Conference, 2009:200 http://ieeexplore.ieee.org/document/5296075/[4] Sato M, Hirose T, Ohki T, et al. 94-GHz band high-gain and low-noise amplifier using InP-HEMTs for passive millimeter wave imager. IEEE MTT-S Int Microw Symp Dig, 2007:1775 http://ieeexplore.ieee.org/document/4264199/[5] Mei X B, Lin C H, Lee L J, et al. A W-band InGaAs/InAlAs/InP HEMT low-noise amplifier MMIC with 2.5 dB noise figure and 19.4 dB gain at 94 GHz. 20th International Conference on Indium Phosphide and Related Materials (IPRM), 2008:1 http://ieeexplore.ieee.org/document/4702933/authors[6] Tsai Z M, Kao J C, Lin K Y, et al. A 24-48 GHz cascode HEMT mixer with DC to 15 GHz IF bandwidth for astronomy radio telescope. European Microwave Integrated Circuits Conference (EuMIC), 2009:5 http://ieeexplore.ieee.org/document/5296425/?reload=true&arnumber=5296425&sortType%3Dasc_p_Sequence%26filter%3DAND(p_IS_Number:5295902)%26rowsPerPage%3D100[7] Tsai Z M, Kao J C, Lin K Y, et al. A compact low DC consumption 24-GHz cascode HEMT VGA. Asia Pacific Microwave Conference (APMC), 2009:1625 http://ieeexplore.ieee.org/document/5384354/[8] Deal W R, Leong K, Mei X B, et al. Scaling of InP HEMT cascode integrated circuits to THz frequencies. IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010:1 http://ieeexplore.ieee.org/document/5619646/authors -
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