Jinshun Bi, Zhengsheng Han. Corrigendum: Characteristics of HfO2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)[J]. Journal of Semiconductors, 2016, 37(3): 038001. doi: 10.1088/1674-4926/37/3/038001 J S Bi, Z S Han. Corrigendum: Characteristics of HfO2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)[J]. J. Semicond., 2016, 37(3): 038001. doi: 10.1088/1674-4926/37/3/038001.Export: BibTex EndNote
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Jinshun Bi, Zhengsheng Han. Corrigendum: Characteristics of HfO 2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)[J]. Journal of Semiconductors, 2016, 37(3): 038001. doi: 10.1088/1674-4926/37/3/038001
J S Bi, Z S Han. Corrigendum: Characteristics of HfO2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)[J]. J. Semicond., 2016, 37(3): 038001. doi: 10.1088/1674-4926/37/3/038001.
Export: BibTex EndNote
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Jinshun Bi, Zhengsheng Han. Corrigendum: Characteristics of HfO2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)[J]. Journal of Semiconductors, 2016, 37(3): 038001. doi: 10.1088/1674-4926/37/3/038001 J S Bi, Z S Han. Corrigendum: Characteristics of HfO2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)[J]. J. Semicond., 2016, 37(3): 038001. doi: 10.1088/1674-4926/37/3/038001.Export: BibTex EndNote
Citation:
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Jinshun Bi, Zhengsheng Han. Corrigendum: Characteristics of HfO 2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)[J]. Journal of Semiconductors, 2016, 37(3): 038001. doi: 10.1088/1674-4926/37/3/038001
J S Bi, Z S Han. Corrigendum: Characteristics of HfO2/Hf-based bipolar resistive memories (2015 J. Semicond. 36 064010)[J]. J. Semicond., 2016, 37(3): 038001. doi: 10.1088/1674-4926/37/3/038001.
Export: BibTex EndNote
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