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Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors

Chen Liu, Yuming Zhang, Yimen Zhang, Hongliang Lü and Bin Lu

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 Corresponding author: Lü Hongliang,Email:hllv@mail.xidian.edu.cn

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Abstract: We have investigated the temperature dependent interfacial and electrical characteristics of p-GaAs metal-oxide-semiconductor capacitors during atomic layer deposition(ALD) and annealing of HfO2 using the tetrakis(ethylmethyl) amino hafnium precursor. The leakage current decreases with the increase of the ALD temperature and the lowest current is obtained at 300℃ as a result of the Frenkel-Poole conduction induced leakage current being greatly weakened by the reduction of interfacial oxides at the higher temperature. Post deposition annealing(PDA) at 500℃ after ALD at 300℃ leads to the lowest leakage current compared with other annealing temperatures. A pronounced reduction in As oxides during PDA at 500℃ has been observed using X-ray photoelectron spectroscopy at the interface resulting in a proportional increase in Ga2O3. The increment of Ga2O3 after PDA depends on the amount of residual As oxides after ALD. Thus, the ALD temperature plays an important role in determining the high-k/GaAs interface condition. Meanwhile, an optimum PDA temperature is essential for obtaining good dielectric properties.

Key words: GaAs metal-oxide-semiconductor capacitortemperatureinterfaceleakage current



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Fig. 1.  $I$-$V$ characteristics of Al/HfO$_{2}$/p-GaAs MOS capacitors for different ALD temperatures without annealing.

Fig. 2.  $I$-$V$ characteristics after annealing HfO$_{2}$ on p-GaAs with different PDA temperatures for ALD at 300 ℃.

Fig. 3.  As 3d core-level spectra of GaAs after annealing HfO$_{2}$ at 500 ℃ for different ALD temperatures.

Fig. 4.  XPS Ga 2p$_{3/2}$ spectra analysis of GaAs after annealing HfO$_{2}$ at 500 $\du$ for different ALD temperatures. (a) Ga 2p$_{3/2}$ core-level spectra. (b) Plot of the percentage and percentage increment of Ga$_{2}$O$_{3}$ after annealing versus ALD temperature.

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    Received: 26 April 2015 Revised: Online: Published: 01 December 2015

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      Chen Liu, Yuming Zhang, Yimen Zhang, Hongliang Lü, Bin Lu. Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors[J]. Journal of Semiconductors, 2015, 36(12): 124003. doi: 10.1088/1674-4926/36/12/124003 C Liu, Y M Zhang, Y M Zhang, H Lü, B Lu. Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors[J]. J. Semicond., 2015, 36(12): 124003. doi: 10.1088/1674-4926/36/12/124003.Export: BibTex EndNote
      Citation:
      Chen Liu, Yuming Zhang, Yimen Zhang, Hongliang Lü, Bin Lu. Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors[J]. Journal of Semiconductors, 2015, 36(12): 124003. doi: 10.1088/1674-4926/36/12/124003

      C Liu, Y M Zhang, Y M Zhang, H Lü, B Lu. Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors[J]. J. Semicond., 2015, 36(12): 124003. doi: 10.1088/1674-4926/36/12/124003.
      Export: BibTex EndNote

      Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors

      doi: 10.1088/1674-4926/36/12/124003
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      Project supported by the Advance Research Project of China(No. 5130803XXXX) and the National Natural Science Foundation of China(No. 61176070).

      More Information
      • Corresponding author: Lü Hongliang,Email:hllv@mail.xidian.edu.cn
      • Received Date: 2015-04-26
      • Accepted Date: 2015-06-17
      • Published Date: 2015-01-25

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