SEMICONDUCTOR DEVICES

Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT

Yong Lei1, and Hai Lu2

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 Corresponding author: Yong Lei, E-mail: leiyong@nuist.edu.cn

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Abstract: The relationship between AlGaN/GaN HEMT gate field plate (FP) and surface-state-related gate lag phenomena is investigated by two-dimensional numerical transient simulations to study the mechanism of the influence of FPs on current collapse. The simulations reveal that adding a field plate has a noticeable impact on the extent of current collapse while it has no influence on lapsed time. The FP is found to suppress current collapse through reducing the ionization probability of surface states by enhancing free hole accumulation next to the AlGaN surface between gate and drain.

Key words: HEMTcurrent collapsegate lagfield plate (FP)surface states



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Fig. 1.  Schematic cross section of AlGaN/GaN HEMT with a gate FP.

Fig. 2.  Color online) Transient drain current in AlGaN/GaN HEMT with different field plate length.

Fig. 3.  (Color online) Ionization probability of surface states and electron concentration of 2DEG at various times for AlGaN/GaN HEMT without an FP.

Fig. 4.  (Color online) Ionization probability of surface states and electron concentration of 2DEG at 10$^{-8}$ s for field plate length: 0, 0.6, 1.2 $\mu $m.

Fig. 5.  (Color online) Ionization probability of surface states and electron concentration at OFF-state ($V_{\rm DS}$ $=$ 15 V, $V_{\rm GS}$ $=$ $-8$ V) for both cases with and without an FP.

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    Received: 22 December 2014 Revised: Online: Published: 01 July 2015

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      Yong Lei, Hai Lu. Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2015, 36(7): 074007. doi: 10.1088/1674-4926/36/7/074007 Y Lei, H Lu. Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT[J]. J. Semicond., 2015, 36(7): 074007. doi: 10.1088/1674-4926/36/7/074007.Export: BibTex EndNote
      Citation:
      Yong Lei, Hai Lu. Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2015, 36(7): 074007. doi: 10.1088/1674-4926/36/7/074007

      Y Lei, H Lu. Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT[J]. J. Semicond., 2015, 36(7): 074007. doi: 10.1088/1674-4926/36/7/074007.
      Export: BibTex EndNote

      Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT

      doi: 10.1088/1674-4926/36/7/074007
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      • Corresponding author: E-mail: leiyong@nuist.edu.cn
      • Received Date: 2014-12-22
      • Accepted Date: 2015-03-05
      • Published Date: 2015-01-25

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