Chin. J. Semicond. > 2006, Volume 27 > Issue 11 > 1966-1969

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Electrochemical Capacitance-Voltage Characterizationof Plasma-Doped Ultra-Shallow Junctions

Wu Huizhen, Ru Guoping, Zhang Yonggang, Jin C G, Mizuno B, Jiang Yulong, Qu Xinping and Li Bingzong

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Abstract: Ultra-shallow Si p+n junctions formed by plasma doping are characterized by electrochemical capacitance-voltage(ECV).By comparing ECV results with secondary ion mass spectroscopy(SIMS) results,it is found that the dopant concentration profiles in the heavily-doped p+ layer as well as junction depths measured by ECV are in good agreement with those measured by SIMS.But the ECV measurement of the dopant concentration in the lightly doped n-type substrate underneath is significantly influenced by the upper heavily-doped layer.The ECV technique is also easy to control and reproduce.The ECV results of ultra-shallow junctions (USJ) formed by plasma doping followed by different annealing processes show that ECV is capable of reliably characterizing a Si USJ with a junction depth as low as 10nm,and dopant concentration up to 1E21cm-3.Its depth resolution can reach as low as 1nm.Therefore it shows great potential in applications for characterizing USJ in sub-65nm technology node CMOS devices.

Key words: electrochemical capacitance-voltageultra-shallow junctiondopant concentration

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    Received: 18 August 2015 Revised: Online: Published: 01 November 2006

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      Wu Huizhen, Ru Guoping, Zhang Yonggang, Jin C G, Mizuno B, Jiang Yulong, Qu Xinping, Li Bingzong. Electrochemical Capacitance-Voltage Characterizationof Plasma-Doped Ultra-Shallow Junctions[J]. Journal of Semiconductors, 2006, In Press. Wu H Z, Ru G P, Zhang Y G, Jin C G, Mizuno B, Jiang Y L, Qu X P, Li B Z. Electrochemical Capacitance-Voltage Characterizationof Plasma-Doped Ultra-Shallow Junctions[J]. Chin. J. Semicond., 2006, 27(11): 1966.Export: BibTex EndNote
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      Wu Huizhen, Ru Guoping, Zhang Yonggang, Jin C G, Mizuno B, Jiang Yulong, Qu Xinping, Li Bingzong. Electrochemical Capacitance-Voltage Characterizationof Plasma-Doped Ultra-Shallow Junctions[J]. Journal of Semiconductors, 2006, In Press.

      Wu H Z, Ru G P, Zhang Y G, Jin C G, Mizuno B, Jiang Y L, Qu X P, Li B Z. Electrochemical Capacitance-Voltage Characterizationof Plasma-Doped Ultra-Shallow Junctions[J]. Chin. J. Semicond., 2006, 27(11): 1966.
      Export: BibTex EndNote

      Electrochemical Capacitance-Voltage Characterizationof Plasma-Doped Ultra-Shallow Junctions

      • Received Date: 2015-08-18

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