Chin. J. Semicond. > 2006, Volume 27 > Issue 6 > 1038-1041
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Calculation of the Efficiency of GaAs Quantum Well Solar Cells

Wang Jianbo, Xiang Bing, Lou Chaogang, Zhang Xiaobing, Lei Wei, Mu Hui and Sun Qiang

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Abstract: The conversion efficiency of GaAs quantum well solar cells is calculated using detailed balance model.We discuss the effects of the quantum well structure on the cell’s conversion efficiency (for example,quasi-Fermi level variations and hot carrier transport).We also investigate the effects of the impact ionization process in the quantum well structure on the conversion efficiency.The results show that impact ionization can help increase the conversion efficiency to some extent.

Key words: quantum well, solar cell, conversion efficiency

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2006

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      Article Navigation >  Journal of Semiconductors  > 2006  >  27(6): 1038-1041
      Wang Jianbo, Xiang Bing, Lou Chaogang, Zhang Xiaobing, Lei Wei, Mu Hui, Sun Qiang. Calculation of the Efficiency of GaAs Quantum Well Solar Cells[J]. Journal of Semiconductors, 2006, In Press. Wang J B, Xiang B, Lou C G, Zhang X B, Lei W, Mu H, Sun Q. Calculation of the Efficiency of GaAs Quantum Well Solar Cells[J]. Chin. J. Semicond., 2006, 27(6): 1038.Export: BibTex EndNote
      Citation:
      Wang Jianbo, Xiang Bing, Lou Chaogang, Zhang Xiaobing, Lei Wei, Mu Hui, Sun Qiang. Calculation of the Efficiency of GaAs Quantum Well Solar Cells[J]. Journal of Semiconductors, 2006, In Press.

      Wang J B, Xiang B, Lou C G, Zhang X B, Lei W, Mu H, Sun Q. Calculation of the Efficiency of GaAs Quantum Well Solar Cells[J]. Chin. J. Semicond., 2006, 27(6): 1038.
      Export: BibTex EndNote
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      Calculation of the Efficiency of GaAs Quantum Well Solar Cells

      • Department of Electronic Engineering, Southeast University,Nanjing 210096,China

      • College of Physics and Information Optic-Electronics,Henan University,Kaifeng 475001,China

      • Department of Electronic Engineering, Southeast University,Nanjing 210096,China

      • Department of Electronic Engineering, Southeast University,Nanjing 210096,China

      • Department of Electronic Engineering, Southeast University,Nanjing 210096,China

      • Department of Electronic Engineering, Southeast University,Nanjing 210096,China

      • No18 Research Institute,China Electronics Technology Group Corporation, Tianjin 300381,China

      • Received Date: 2015-08-20

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