SEMICONDUCTOR INTEGRATED CIRCUITS

A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

Qin Ge, Hongqi Tao and Xuming Yu

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 Corresponding author: Ge Qin,Email:geqin_001@163.com

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Abstract: This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute's GaAs pHEMT monolithic microwave integrated circuit(MMIC) technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1:8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33-34 dBm saturated output power across the frequency range of 1.8 to 3 GHz with associated power-added efficiency of 35%-45% and very flat power gain of 25-26 dB in CW mode. The size of this MMIC is very compact with 2.7×2.75 mm2.

Key words: widebandMMICGaAs pHEMTpower amplifierhigh efficiency



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Fig1.  $H_{21}$ and MSG/MAG as a function of frequency response for the unit-cell pHEMT with 6 $\times$ 80 $\mu$m at $V_{\rm d}$ $=$ 5 V and $V_{\rm g}$ $=$ $-0.6$~V.

Fig2.  Schematic diagram of the developed PA MMIC using LPF/HPF combined matching circuit.

Fig3.  Microphotograph of the two-stage GaAs pHEMT power amplifier MMIC with size of 2.7 $\times$ 2.75 mm$^{2}$.

Fig4.  The measured and simulated small signal S-parameter of the PA MMIC at the drain bias of 5 V.

Fig5.  The linear power performance of the PA MMIC at the input power of -0.5 dBm, below 1 dB gain compression.

Fig6.  The saturated power performance of the PA MMIC at the input power of 8 dBm.

Fig7.  The saturated overall drain current of the developed MMIC amplifier.

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    Received: 30 March 2015 Revised: Online: Published: 01 December 2015

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      Qin Ge, Hongqi Tao, Xuming Yu. A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC[J]. Journal of Semiconductors, 2015, 36(12): 125003. doi: 10.1088/1674-4926/36/12/125003 Q Ge, H Q Tao, X M Yu. A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC[J]. J. Semicond., 2015, 36(12): 125003. doi: 10.1088/1674-4926/36/12/125003.Export: BibTex EndNote
      Citation:
      Qin Ge, Hongqi Tao, Xuming Yu. A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC[J]. Journal of Semiconductors, 2015, 36(12): 125003. doi: 10.1088/1674-4926/36/12/125003

      Q Ge, H Q Tao, X M Yu. A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC[J]. J. Semicond., 2015, 36(12): 125003. doi: 10.1088/1674-4926/36/12/125003.
      Export: BibTex EndNote

      A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

      doi: 10.1088/1674-4926/36/12/125003
      More Information
      • Corresponding author: Ge Qin,Email:geqin_001@163.com
      • Received Date: 2015-03-30
      • Accepted Date: 2015-06-14
      • Published Date: 2015-01-25

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