Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 528-531

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Abstract: 在模拟集成电路的应用中,不仅注重器件fT,而且注重晶体管最高振荡频率(fmax).文中以MBE生长的SiGe材料为基础,进行了提高SiGe HBT器件fmax的研究,研制出了fmax=157GHz的SiGe HBT器件

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      基于MBE的fmax为157GHz的SiGe HBT器件[J]. Journal of Semiconductors, 2005, In Press. 基于MBE的fmax为157GHz的SiGe HBT器件[J]. Chin. J. Semicond., 2005, 26(3): 528.Export: BibTex EndNote
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      基于MBE的fmax为157GHz的SiGe HBT器件[J]. Journal of Semiconductors, 2005, In Press.

      基于MBE的fmax为157GHz的SiGe HBT器件[J]. Chin. J. Semicond., 2005, 26(3): 528.
      Export: BibTex EndNote

      基于MBE的fmax为157GHz的SiGe HBT器件

      • Received Date: 2015-08-19

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