SEMICONDUCTOR PHYSICS

Effect of annealing process on the surface roughness in multiple Al implanted 4H-SiC

Wu Hailei, Sun Guosheng, Yang Ting, Yan Guoguo, Wang Lei, Zhao Wanshun, Liu Xingfang, Zeng Yiping and Wen Jialiang

+ Author Affiliations

PDF

Abstract: A P-layer can be formed on a SiC wafer surface by using multiple Al ion implantations and post-implantation annealing in a low pressure CVD reactor. The Al depth profile was almost box shaped with a height of 1 × 1019 cm-3 and a depth of 550 nm. Three different annealing processes were developed to protect the wafer surface. Variations in RMS roughness have been measured and compared with each other. The implanted SiC, annealed with a carbon cap, maintains a high-quality surface with an RMS roughness as low as 3.8 nm. Macrosteps and terraces were found in the SiC surface, which annealed by the other two processes (protect in Ar/protect with SiC capped wafer in Ar). The RMS roughness is 12.2 nm and 6.6 nm, respectively.

Key words: 4H-SiCion implantationannealingsurface morphology

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4106 Times PDF downloads: 3895 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 22 March 2011 Online: Published: 01 July 2011

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Wu Hailei, Sun Guosheng, Yang Ting, Yan Guoguo, Wang Lei, Zhao Wanshun, Liu Xingfang, Zeng Yiping, Wen Jialiang. Effect of annealing process on the surface roughness in multiple Al implanted 4H-SiC[J]. Journal of Semiconductors, 2011, 32(7): 072002. doi: 10.1088/1674-4926/32/7/072002 Wu H L, Sun G S, Yang T, Yan G G, Wang L, Zhao W S, Liu X F, Zeng Y P, Wen J L. Effect of annealing process on the surface roughness in multiple Al implanted 4H-SiC[J]. J. Semicond., 2011, 32(7): 072002. doi: 10.1088/1674-4926/32/7/072002.Export: BibTex EndNote
      Citation:
      Wu Hailei, Sun Guosheng, Yang Ting, Yan Guoguo, Wang Lei, Zhao Wanshun, Liu Xingfang, Zeng Yiping, Wen Jialiang. Effect of annealing process on the surface roughness in multiple Al implanted 4H-SiC[J]. Journal of Semiconductors, 2011, 32(7): 072002. doi: 10.1088/1674-4926/32/7/072002

      Wu H L, Sun G S, Yang T, Yan G G, Wang L, Zhao W S, Liu X F, Zeng Y P, Wen J L. Effect of annealing process on the surface roughness in multiple Al implanted 4H-SiC[J]. J. Semicond., 2011, 32(7): 072002. doi: 10.1088/1674-4926/32/7/072002.
      Export: BibTex EndNote

      Effect of annealing process on the surface roughness in multiple Al implanted 4H-SiC

      doi: 10.1088/1674-4926/32/7/072002
      • Received Date: 2015-08-18
      • Accepted Date: 2011-02-21
      • Revised Date: 2011-03-22
      • Published Date: 2011-06-22

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return