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Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures

Zhao Jianzhi1, Lin Zhaojun1, , Lü Yuanjie1, Corrigan Timothy D2, Meng Lingguo1, Zhang Yu1, Wang Zhanguo3 and Chen Hong4

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 Corresponding author:

linzj@sdu.edu.cn

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Abstract:

Ni/Au Schottky contacts with thicknesses of either 50 Å/50 Å or 600 Å/2000 Å were deposited on strained Al0.3Ga0.7N/GaN heterostructures. Using the measured C–V curves and I–V characteristics at room temperature, the calculated density of the two-dimensional electron-gas (2DEG) of the 600 Å/2000 Å thick Ni/Au Schottky contact is about 9.13 × 1012 cm–2 and that of the 50 Å/50 Å thick Ni/Au Schottky contact is only about 4.77 × 1012 cm–2. The saturated current increases from 60.88 to 86.34 mA at a bias of 20 V as the thickness of the Ni/Au Schottky contact increases from 50 Å/50 Å to 600 Å/2000 Å. By self-consistently solving Schrodinger's and Poisson's equations, the polarization charge sheet density of the two samples was calculated, and the calculated results show that the polarization in the AlGaN barrier layer for the thick Ni/Au Schottky contact is stronger than the thin one. Thus, we attribute the results to the increased biaxial tensile stress in the Al0.3Ga0.7N barrier layer induced by the 600 Å/2000 Å thick Ni/Au Schottky contact.

Key words: AlGaN/GaN heterostructureSchottky contact thicknessestwo dimensional electron gastensile stress

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    Received: 18 August 2015 Revised: 03 March 2010 Online: Published: 01 August 2010

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      Zhao Jianzhi, Lin Zhaojun, Lü Yuanjie, Corrigan Timothy D, Meng Lingguo, Zhang Yu, Wang Zhanguo, Chen Hong. Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures[J]. Journal of Semiconductors, 2010, 31(8): 084007. doi: 10.1088/1674-4926/31/8/084007 Zhao J Z, Lin Z J, Lü Y J, Corrigan T D, Meng L G, Zhang Y, Wang Z G, Chen H. Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures[J]. J. Semicond., 2010, 31(8): 084007. doi:  10.1088/1674-4926/31/8/084007.Export: BibTex EndNote
      Citation:
      Zhao Jianzhi, Lin Zhaojun, Lü Yuanjie, Corrigan Timothy D, Meng Lingguo, Zhang Yu, Wang Zhanguo, Chen Hong. Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures[J]. Journal of Semiconductors, 2010, 31(8): 084007. doi: 10.1088/1674-4926/31/8/084007

      Zhao J Z, Lin Z J, Lü Y J, Corrigan T D, Meng L G, Zhang Y, Wang Z G, Chen H. Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures[J]. J. Semicond., 2010, 31(8): 084007. doi:  10.1088/1674-4926/31/8/084007.
      Export: BibTex EndNote

      Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al0.3Ga0.7N/GaN heterostructures

      doi: 10.1088/1674-4926/31/8/084007
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      • Corresponding author:

        linzj@sdu.edu.cn

      • Received Date: 2015-08-18
      • Accepted Date: 2010-01-06
      • Revised Date: 2010-03-03
      • Published Date: 2010-07-31

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