J. Semicond. > 2018, Volume 39 > Issue 1 > 011008, doi: 10.1088/1674-4926/39/1/011008
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Special Issue on Flexible and Wearable Electronics: from Materials to Applications

Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

Jiazhen Sheng, Ki-Lim Han, TaeHyun Hong, Wan-Ho Choi and Jin-Seong Park

+ Author Affiliations

 Corresponding author: Prof. Jin-Seong Park ( jsparklime@hanyang.ac.kr)

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Abstract: The current article is a review of recent progress and major trends in the field of flexible oxide thin film transistors (TFTs), fabricating with atomic layer deposition (ALD) processes. The ALD process offers accurate controlling of film thickness and composition as well as ability of achieving excellent uniformity over large areas at relatively low temperatures. First, an introduction is provided on what is the definition of ALD, the difference among other vacuum deposition techniques, and the brief key factors of ALD on flexible devices. Second, considering functional layers in flexible oxide TFT, the ALD process on polymer substrates may improve device performances such as mobility and stability, adopting as buffer layers over the polymer substrate, gate insulators, and active layers. Third, this review consists of the evaluation methods of flexible oxide TFTs under various mechanical stress conditions. The bending radius and repetition cycles are mostly considering for conventional flexible devices. It summarizes how the device has been degraded/changed under various stress types (directions). The last part of this review suggests a potential of each ALD film, including the releasing stress, the optimization of TFT structure, and the enhancement of device performance. Thus, the functional ALD layers in flexible oxide TFTs offer great possibilities regarding anti-mechanical stress films, along with flexible display and information storage application fields.

Key words: atomic layer deposition (ALD), oxide semiconductor, thin film transistor, flexible device, mechanical stress



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Fig. 1.  (Color online) Schematic diagram of general growth process of ALD.

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Fig. 2.  (Color online) (a) Schematic diagram of top-gate and bottom contact a-IGZO TFT, transfer characteristics with different buffer fabrication process (detailed fabrication process in supporting information) that (b) using water/ozone as reactant, (c) under NBTS (VG = −20 V, temperature = 60 °C and time = 3000 s) in air ambient (relative humidity, RH = 30%), (d) device density of states of near-conduction band for TFTs with different reactant and measured in RH 30% and vacuum.

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Fig. 3.  (Color online) (a) Structure of a-IGZO TFT fabricated on polyimide substrate with different buffer materials and stack structures (detail fabrication process in supporting information) and (b) relative transfer performance. (c) Schematic cross-sectional view of the fabricated a-IGZO TFT on a flexible PEN substrate with inorganic/organic buffer layer. (d) IDS–VGS transfer curves of organic and inorganic/organic buffer layer based TFTs[22, 43].

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Fig. 4.  (Color online) (a) Schematic illustration of the a-IGZO TFT on polyimide substrate with bottom gate and top contact structures (detail fabrication process in supporting information). (b) Strain and stress applied to thin Al2O3 layer in organic/inorganic hybrid gate dielectric with varying Al2O3 thicknesses. (c) Cross-sectional FIB/SEM images of the a-IGZO TFT with the PVP (400 nm)/Al2O3 (40 nm) hybrid gate dielectric after 105 bending cycles in tension mode. (d) Transfer characteristics of cyclically bent a-IGZO TFTs with PVP (400 nm)/Al2O3 (20 nm) hybrid gate dielectrics, PVP (400 nm)/Al2O3 (30 nm) hybrid gate dielectrics, and PVP (400 nm)/Al2O3 (40 nm) hybrid gate dielectrics[49]. (copyright 2014 Elsevier B.V.)

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Fig. 5.  (Color online) (a) Homogeneous laminated active layer deposited by ALD, (b) bi-layer, and (c) gradient active layer by ALD for oxide semiconductor TFTs[63–64] (detailed fabrication process in supplement information).

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Fig. 6.  (Color online) High performance flexible ALD oxide TFT with active layer as (a) InOx with N2O plasma post treatment (copyright 2016, American Chemical Society) and (b) IZO that in term of growth temperature dependence (copyright 2016, American Chemical Society)[53, 54].

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Fig. 7.  (Color online) (a) Flexible ALD InOx TFTs bending test over bending jig with different bending radius from 15 to 5 mm, (b) Example picture of the flexible TFT measurement with bending jig. (c) Evolution of the transfer performance of flexible IZO TFT fabricated on polyimide substrates as a function of bending cycles and strains[53, 54].

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Fig. 8.  (Color online) (a) a-IGZO TFT performance for different types of stress (tensile/compressive) on the 50 μm PI substrate, and (b) schematics of bent InOx TFTs for a bending axis vertical to (for case I) and parallel to (for case II) device current, and transfer characteristics of InOx TFTs under repeated bending cycles with different bending cases (copyright 2016, American Chemical Society)[54, 79].

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Table 1.   Summary of recent reports for ALD buffer layer based flexible oxide TFTs.

Substrate Buffer layer Method Active layer Mobility Strain/radius Bending cycle Ref.
PI SiOx, SiNx/Al2O3 PECVD/ALD IGZO 14.88 15 mm 10000 [22]
Polyethylene naphthalate Organic/Al2O3 ALD IGZO 15.5 3.3 mm 10000 [43]
PI SiNx/SiO2/Al2O3 ALD InOx 15 5 mm (0.4% tens.) 10000 [44]
PI Al2O3 ALD a-IGZO 12.5 2 mm [45]
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Table 2.   Transfer performance parameters comparison for device with different buffer layers[43].

Device Mobility (cm2/(V·s)) Threshold voltage (V) Subthreshold swing (V/dec) On/off ratio
No buffer 1.11 9.4 0.4 3.1 × 107
Organic buffer 14.4 2.8 0.4 1.5 × 109
Hybrid buffer 15.5 4.1 0.2 4.7 × 109
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Table 3.   Summary of recent reports for ALD gate insulator based flexible oxide TFTs.

Substrate Gate insulator Method Ative layer Mobility Strain/radius Bending cycle Ref.
PI Al2O3 ALD a-IGZO 7.5 3.5 mm [50]
PI PVP/Al2O3 ALD IGZO 8.39 10 mm 100000 [49]
PI Al2O3 ALD IGZO 10.5 6 mm [51]
Polyethylene naphthalate Al2O3 ALD IGZO 15.5 3 mm 10000 [52]
PI Al2O3 ALD IZO 42.1 2 mm 5000 [53]
PI Al2O3 ALD InOx 9.7 5 mm 10000 [54]
PET Al2O3 ALD IZO 40.1 7.5 mm 5000 [55]
PI Al2O3 ALD ZnO 1.75 mm (0.14% comp.) 90000 [56]
PI Al2O3 ALD InOx 15 5 mm (0.4% tens.) 10000 [44]
PI Al2O3 ALD a-IGZO 12.5 2 mm [45]
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Table 4.   Transfer performance parameters under mechanical stress by jig bars of different radius[54].

Bending radius (mm) Strain Vth (V) μsat (cm2/(V·s)) S.S. (V/decade) Hysteresis (V) ION/IOFF
0 0 −0.22 9.7 0.87 0.9 9.4 × 109
15 0.12% −0.49 8.77 0.96 1.23 4.6 × 109
10 0.18% −0.72 8.38 0.98 1.47 4.8 × 109
5 0.38% −1.46 8.09 0.97 1.87 4.8 × 109
DownLoad: CSV
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    Received: 12 October 2017 Revised: 18 November 2017 Online: Accepted Manuscript: 27 December 2017Published: 01 January 2018

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      Article Navigation >  Journal of Semiconductors  > 2018  >  39(1): 011008
      Jiazhen Sheng, Ki-Lim Han, TaeHyun Hong, Wan-Ho Choi, Jin-Seong Park. Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes[J]. Journal of Semiconductors, 2018, 39(1): 011008. doi: 10.1088/1674-4926/39/1/011008 J Z Sheng, K Han, T Hong, W Choi, J Park, Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes[J]. J. Semicond., 2018, 39(1): 011008. doi: 10.1088/1674-4926/39/1/011008.Export: BibTex EndNote
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      Jiazhen Sheng, Ki-Lim Han, TaeHyun Hong, Wan-Ho Choi, Jin-Seong Park. Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes[J]. Journal of Semiconductors, 2018, 39(1): 011008. doi: 10.1088/1674-4926/39/1/011008

      J Z Sheng, K Han, T Hong, W Choi, J Park, Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes[J]. J. Semicond., 2018, 39(1): 011008. doi: 10.1088/1674-4926/39/1/011008.
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      Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

      doi: 10.1088/1674-4926/39/1/011008

      • Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea

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      Project supported by the National Research Foundation of Korea (NRF) (No. NRF-2017R1D1A1B03034035), the Ministry of Trade, Industry & Energy (No. #10051403), and the Korea Semiconductor Research Consortium.

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      • Corresponding author: Prof. Jin-Seong Park ( jsparklime@hanyang.ac.kr)
      • Received Date: 2017-10-12
      • Revised Date: 2017-11-18
      • Published Date: 2018-01-01

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