SEMICONDUCTOR MATERIALS

Size-independent growth of pure zinc blende GaAs nanowires

Ye Xian, Huang Hui, Guo Jingwei, Ren Xiaomin, Huang Yongqing and Wang Qi

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Abstract: Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs (111) B substrates via Au catalyzed vapor-liquid-solid mechanism. We found that the grown nanowires are rod-like in shape and have a pure zinc blende structure; moreover, the growth rate is independent on its diameters. It can be concluded that, direct impingement of vapor species onto the Au--Ga droplets contributes to the growth of the nanowire; in contrast, the adatom diffusion makes little contribution. The results indicate that the droplet acts as a catalyst rather than an adatom collector, larger diameter and high supersatuation in the droplet leads to the pure zinc blende structure of the nanowire.

Key words: GaAs nanowiresupersatuationpure zinc blende structuremetalorganic chemical vapor deposition

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    Received: 18 August 2015 Revised: 25 February 2010 Online: Published: 01 July 2010

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      Ye Xian, Huang Hui, Guo Jingwei, Ren Xiaomin, Huang Yongqing, Wang Qi. Size-independent growth of pure zinc blende GaAs nanowires[J]. Journal of Semiconductors, 2010, 31(7): 073001. doi: 10.1088/1674-4926/31/7/073001 Ye X, Huang H, Guo J W, Ren X M, Huang Y Q, Wang Q. Size-independent growth of pure zinc blende GaAs nanowires[J]. J. Semicond., 2010, 31(7): 073001. doi: 10.1088/1674-4926/31/7/073001.Export: BibTex EndNote
      Citation:
      Ye Xian, Huang Hui, Guo Jingwei, Ren Xiaomin, Huang Yongqing, Wang Qi. Size-independent growth of pure zinc blende GaAs nanowires[J]. Journal of Semiconductors, 2010, 31(7): 073001. doi: 10.1088/1674-4926/31/7/073001

      Ye X, Huang H, Guo J W, Ren X M, Huang Y Q, Wang Q. Size-independent growth of pure zinc blende GaAs nanowires[J]. J. Semicond., 2010, 31(7): 073001. doi: 10.1088/1674-4926/31/7/073001.
      Export: BibTex EndNote

      Size-independent growth of pure zinc blende GaAs nanowires

      doi: 10.1088/1674-4926/31/7/073001
      • Received Date: 2015-08-18
      • Accepted Date: 2009-06-06
      • Revised Date: 2010-02-25
      • Published Date: 2010-07-05

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