J. Semicond. > 2015, Volume 36 > Issue 4 > 044006, doi: 10.1088/1674-4926/36/4/044006
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SEMICONDUCTOR DEVICES

An analysis of the dynamic avalanche mechanism of an improved FCE diode with a deep p+ adjusting region

Cailin Wang and Lei Zhang

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 Corresponding author: Cailin Wang, E-mail: wangcailin@xaut.edu.cn

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Abstract: An improved field charge extraction (FCE) diode with a deep p+ adjusting region at the cathode side is studied. The reverse recovery mechanism and electric field gradient are thoroughly analyzed and validated using ISE simulation results. The results show that, based on the premise of ensuring the static characteristics, the improved FCE diode can clearly improve the softness and effectively suppress the peak electric field of the nn- junction at the cathode side during reverse recovery, and thus has a high dynamic avalanche capability compared with conventional FCE diodes.

Key words: power semiconductor device, FSRD, softness, dynamic avalanche



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Fig. 1.  (a) The FCE and (b) improved FCE diodes. (c) The equivalent circuit.

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Fig. 2.  Comparisons of the static characteristics of the FCE and improved FCE diodes. (a) Forward conduction characteristics. (b) The curves of $\gamma_{\rm n}$-$J_{\rm A}$ during conduction. (c) Reverse blocking characteristics.

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Fig. 3.  A comparison of the reverse recovery characteristics of the FCE and improved FCE diodes under different conditions. (a) $V_{\rm DC}$ $=$ 1.8 kV, $J_{\rm F}$ $=$ 100 A/cm$^{2}$, $L$ $=$ 1.25 $\mu$H, $T$ $=$ 300 K. (b) $V_{\rm DC}$ $=$ 2.3~kV, $J_{\rm F}$ $=$ 100 A/cm$^{2}$, $L$ $=$ 1.25 $\mu$H, $T$ $=$ 400 K.

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Fig. 4.  A comparison of $\gamma_{\rm p}$ and hole concentration distributions of the FCE and improved FCE diodes, and the electron concentration of the n buffer layer above the n$^{+}$ cathode region in the improved FCE diode ($V_{\rm DC}$ $=$ 1.8 kV, $J_{\rm F}$ $=$ 100 A/cm$^{2}$, $L$ $=$ 1.25 $\mu $H, $T$ $=$ 300 K). (a) Curves of $\gamma_{\rm p}$-$t$ during reverse recovery. (b) Hole concentration distributions. (c) Electron concentration distributions.

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Fig. 5.  A comparison of the electric field strength distributions of the FCE and improved FCE diodes under higher stress ($V_{\rm DC}$ $=$ 2.3~kV, $J_{\rm F}$ $=$ 100 A/cm$^{2}$, $L$ $=$ 1.25 $\mu $H, $T$ $=$ 400 K). (a) FCE diode. (b) Improved FCE diode.

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Fig. 6.  A comparison of the power losses and current-voltage tracks of the FCE and improved FCE diodes during reverse recovery under high stress ($V_{\rm DC}$ $=$ 2.3 kV, $J_{\rm F}$ $=$ 100 A/cm$^{2}$, $L$ $=$ 1.25 $\mu $H, $T$ $=$ 400~K). (a) Power loss. (b) Current-voltage track.

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    Received: 08 July 2014 Revised: Online: Published: 01 April 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(4): 044006
      Cailin Wang, Lei Zhang. An analysis of the dynamic avalanche mechanism of an improved FCE diode with a deep p+ adjusting region[J]. Journal of Semiconductors, 2015, 36(4): 044006. doi: 10.1088/1674-4926/36/4/044006 C L Wang, L Zhang. An analysis of the dynamic avalanche mechanism of an improved FCE diode with a deep p+ adjusting region[J]. J. Semicond., 2015, 36(4): 044006. doi: 10.1088/1674-4926/36/4/044006.Export: BibTex EndNote
      Citation:
      Cailin Wang, Lei Zhang. An analysis of the dynamic avalanche mechanism of an improved FCE diode with a deep p+ adjusting region[J]. Journal of Semiconductors, 2015, 36(4): 044006. doi: 10.1088/1674-4926/36/4/044006

      C L Wang, L Zhang. An analysis of the dynamic avalanche mechanism of an improved FCE diode with a deep p+ adjusting region[J]. J. Semicond., 2015, 36(4): 044006. doi: 10.1088/1674-4926/36/4/044006.
      Export: BibTex EndNote
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      An analysis of the dynamic avalanche mechanism of an improved FCE diode with a deep p+ adjusting region

      doi: 10.1088/1674-4926/36/4/044006

      • Xi'an University of Technology, Xi'an 710048, China

      Funds:

      Project supported by the Doctoral Program of Higher Education of China (RFDP) (No. 20136118110004), and the National Natural Science Foundation of China (Nos. 51077110, 51477137).

      More Information
      • Corresponding author: E-mail: wangcailin@xaut.edu.cn
      • Received Date: 2014-07-08
      • Accepted Date: 2014-11-19
      • Published Date: 2015-01-25

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