| Citation: |
Ma Long, Yi Xiaoyan, Guo Jinxia, Wang Liangchen, Wang Guohong, Li Jinmin. Research on Key Technologies of High Power GaN-Based LED[J]. Journal of Semiconductors, 2005, In Press.
Ma L, Yi X Y, Guo J X, Wang L C, Wang G H, Li J M. Research on Key Technologies of High Power GaN-Based LED[J]. Chin. J. Semicond., 2005, 26(13): 165.
Export: BibTex EndNote
|
Research on Key Technologies of High Power GaN-Based LED
-
Abstract
The key technologies of high power GaN-based LED especially the design of large size LED chip,the selection and preparation of p electrode,the improvement of extract efficiency, and the flip chip technology are introduced and discussed.-
Keywords:
- power,
- gallium nitride,
- light emitting diode,
- flip chip
-
References
-
Proportional views
DownLoad: