| Citation: |
Wang Li, Pu Yong, Fang Wenqing, Mo Chunlan, Xiong Chuanbing, Jiang Fengyi. Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD[J]. Journal of Semiconductors, 2003, In Press.
Wang L, Pu Y, Fang W Q, Mo C L, Xiong C B, Jiang F Y. Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD[J]. Chin. J. Semicond., 2003, 24(3): 409.
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Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD
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Abstract
ZnO films grown by metal organic chemical vapor deposition at atmospheric pressure are annealed at 850℃,with the film surfaces exposed to air or covered by a sapphire wafer.The optical properties of the as-grown and the annealed samples are studied by photoluminescence (PL) spectroscopy.It is found that the air-exposure annealing effectively removes the hydrogen impurities from the ZnO films but greatly increases the deep-level emission.In the surface-covered annealed sample,an elimination of the hydrogen impurities is also observed,and the deep-level emission disappears completely.The free exciton emission is significantly enhanced in the ZnO film after surface-covered annealing.-
Keywords:
- zinc oxide,
- annealing,
- optical properties,
- exciton
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References
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Proportional views
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