| Citation: |
Zhu Zhangming, Qian Libo, Yang Yintang. A Novel Interconnect Crosstalk Parallel RLC Analyzable Model Based on the 65nm CMOS Process[J]. Journal of Semiconductors, 2008, In Press.
Zhu Z M, Qian L B, Yang Y T. A Novel Interconnect Crosstalk Parallel RLC Analyzable Model Based on the 65nm CMOS Process[J]. J. Semicond., 2008, 29(3): 423.
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A Novel Interconnect Crosstalk Parallel RLC Analyzable Model Based on the 65nm CMOS Process
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Abstract
Based on the 65nm CMOS process,a novel parallel RLC coupling interconnect analytical model is presented synthetically considering parasitical capacitive and parasitical inductive effects.Applying function approximation and model order-reduction to the model,we derive a closed-form and time-domain waveform for the far-end crosstalk of a victim line under ramp input transition.For various interconnect coupling sizes,the proposed RLC coupling analytical model enables the estimation of the crosstalk voltage within 2.50% error compared with Hspice simulation in a 65nm CMOS process.This model can be used in computer-aided-design of nanometer SOCs. -
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