Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 476-479
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AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array

Ma Jiehui, Fang Gaozhan, Lan Yongsheng and and Ma Xiaoyu

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Abstract: A novel AIN monolithic microchannel cooled heatsink for high power laser diode array is introduced.The high power stack laser diode array with an AIN monolithic microchannel heatsink is fabricated and tested.The thermal impedance of a 10 stack laser diode array is 0.121℃/W.The pitch between two adjacent bars is 1.17mm.The power level of 611W is achieved under the 20% duty factor condition at an emission wavelength around 808nm.

Key words: microchannel, monolithic, AIN

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    Received: 18 August 2015 Revised: Online: Published: 01 March 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(3): 476-479
      Ma Jiehui, Fang Gaozhan, Lan Yongsheng and, Ma Xiaoyu. AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array[J]. Journal of Semiconductors, 2005, In Press. Ma J H, Fang G Z, Lan Y S, Ma X Y. AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array[J]. Chin. J. Semicond., 2005, 26(3): 476.Export: BibTex EndNote
      Citation:
      Ma Jiehui, Fang Gaozhan, Lan Yongsheng and, Ma Xiaoyu. AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array[J]. Journal of Semiconductors, 2005, In Press.

      Ma J H, Fang G Z, Lan Y S, Ma X Y. AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array[J]. Chin. J. Semicond., 2005, 26(3): 476.
      Export: BibTex EndNote
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      AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array

      • National Engineering Research Center for Opto-Electronic Device,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • National Engineering Research Center for Opto-Electronic Device,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100084,China

      • National Engineering Research Center for Opto-Electronic Device,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100085,China

      • National Engineering Research Center for Opto-Electronic Device,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100086,China

      • Received Date: 2015-08-18

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