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High-quality ZnO growth, doping, and polarization effect

Kun Tang1, Shulin Gu1, , Jiandong Ye1, 2, Shunming Zhu1, Rong Zhang1 and Youdou Zheng1

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 Corresponding author: Gu Shulin, Email:slgu@nju.edu.cn

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Abstract: The authors have reported their recent progress in the research field of ZnO materials as well as the corresponding global advance. Recent results regarding(1) the development of high-quality epitaxy techniques,(2) the defect physics and the Te/N co-doping mechanism for p-type conduction, and(3) the design, realization, and properties of the ZnMgO/ZnO hetero-structures have been shown and discussed. A complete technology of the growth of high-quality ZnO epi-films and nano-crystals has been developed. The co-doping of N plus an iso-valent element to oxygen has been found to be the most hopeful path to overcome the notorious p-type hurdle. High mobility electrons have been observed in low-dimensional structures utilizing the polarization of ZnMgO and ZnO. Very different properties as well as new physics of the electrons in 2DEG and 3DES have been found as compared to the electrons in the bulk.

Key words: ZnOhomo-and hetero-epitaxynative defectsp-type dopingtellurium-nitrogen co-dopingZnMgO/ZnO hetero-structure



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Fig. 1.  (Color online) The Raman spectra of ZnO buffers grown on 900 °-pretreated Zn-polar and O-polar substrates.

Fig. 2.  (Color online) The RT-PL of ZnO buffers grown on 1000 °-pretreated Zn-polar and O-polar substrates.

Fig. 3.  (Color online) (a) Resistivity, (b) mobility, and (c) carrier concentration measured by a Hall-effect system for the Te/N co-doped ZnO films grown by N$_{2}$O as nitrogen doping source.

Fig. 4.  (Color online) The Hall voltages versus applied magnetic field measured on the annealed Te/N co-doped ZnO films grown by N$_{2}$O as nitrogen doping source.

Fig. 5.  (Color online) The $C$-$V$ characterizations of the annealed Te/N co-doped ZnO films grown by NH$_{3}$ as nitrogen doping source.

Fig. 6.  (Color online) Room-temperature PL spectra for an N-mono-doped and two pcs of Te/N co-doped ZnO films.

Fig. 7.  (Color online) The variable temperature PL spectra for a N-mono-doped and two pcs of Te/N co-doped ZnO films.

Fig. 8.  (Color online) The energy positions of the variable temperature PL peaks as a function of temperature for an N-mono-doped and two pcs of Te/N co-doped ZnO films.

Fig. 9.  (Color online) Raman spectra of (a) N-doped samples and (b) Te-N co-doped samples annealed at 600-900 °.

Fig. 10.  Low-temperature PL of (a) N-mono-doped samples and (b) Te/N co-doped samples.

Fig. 11.  (Color online) The calculated band diagrams and the carrier concentration depth profile measured by $C$-$V$ and calculated theoretically for both of the samples.

Fig. 12.  The schematic band diagrams for the samples with (a) thinner ZnMgO cap-layers and (b) thicker ZnMgO cap-layers.

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    Received: 30 October 2015 Revised: Online: Published: 01 March 2016

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      Kun Tang, Shulin Gu, Jiandong Ye, Shunming Zhu, Rong Zhang, Youdou Zheng. High-quality ZnO growth, doping, and polarization effect[J]. Journal of Semiconductors, 2016, 37(3): 031001. doi: 10.1088/1674-4926/37/3/031001 K Tang, S L Gu, Jiandong Ye and O N Ye, S M Zhu, R Zhang, Y D Zheng. High-quality ZnO growth, doping, and polarization effect[J]. J. Semicond., 2016, 37(3): 031001. doi: 10.1088/1674-4926/37/3/031001.Export: BibTex EndNote
      Citation:
      Kun Tang, Shulin Gu, Jiandong Ye, Shunming Zhu, Rong Zhang, Youdou Zheng. High-quality ZnO growth, doping, and polarization effect[J]. Journal of Semiconductors, 2016, 37(3): 031001. doi: 10.1088/1674-4926/37/3/031001

      K Tang, S L Gu, Jiandong Ye and O N Ye, S M Zhu, R Zhang, Y D Zheng. High-quality ZnO growth, doping, and polarization effect[J]. J. Semicond., 2016, 37(3): 031001. doi: 10.1088/1674-4926/37/3/031001.
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      High-quality ZnO growth, doping, and polarization effect

      doi: 10.1088/1674-4926/37/3/031001
      Funds:

      Project supported by the National Natural Science Foundation of China(Nos.61025020, 61274058, 61322403, 61504057, 61574075), the Natural Science Foundation of Jiangsu Province(Nos.BK2011437, BK20130013, BK20150585), the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for the Central Universities.

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      • Corresponding author: Gu Shulin, Email:slgu@nju.edu.cn
      • Received Date: 2015-10-30
      • Accepted Date: 1984-11-15
      • Published Date: 2016-01-25

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