| Citation: |
Liu Zhan, Gu Xiaofeng, Yu Zongguang, Hu Xiduo, Zang Jiafeng. A New Hydrodynamic Model Method for Semiconductor Device Simulation[J]. Journal of Semiconductors, 2008, In Press.
Liu Z, Gu X F, Yu Z G, Hu X D, Zang J F. A New Hydrodynamic Model Method for Semiconductor Device Simulation[J]. J. Semicond., 2008, 29(8): 1570.
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A New Hydrodynamic Model Method for Semiconductor Device Simulation
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Abstract
The solution using a spline procedure,SADI,and a high-order compact finite difference (HOC) method is presented for the hydrodynamic (HD) model for semiconductor device simulation.We compare the numerical results with two of the most popular simulation methods currently,CGS and Newton-SOR.Our method decreases the number of iterations by 40% and reduces the computation time greatly. -
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