SEMICONDUCTOR DEVICES

A novel structure in reducing the on-resistance of a VDMOS

Yang Yonghui, Tang Zhaohuan, Zhang Zhengyuan, Liu Yong, Wang Zhikuan, Tan Kaizhou and Feng Zhicheng

+ Author Affiliations

PDF

Abstract: A novel structure of a VDMOS in reducing on-resistance is proposed. With this structure, the specific on-resistance value of the VDMOS is reduced by 22% of that of the traditional VDMOS structure as the breakdown voltage maintained the same value in theory, and there is only one additional mask in processing the new structure VDMOS, which is easily fabricated. With the TCAD tool, one 200 V N-channel VDMOS with the new structure is analyzed, and simulated results show that a specific on-resistance value will reduce by 23%, and the value by 33% will be realized when the device is fabricated in three epitaxies and four buried layers. The novel structure can be widely used in the strip-gate VDMOS area.

Key words: VDMOSon-resistancespecific on-resistancebreakdown voltageepitaxial layer resistance

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4319 Times PDF downloads: 2691 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 22 September 2010 Online: Published: 01 February 2011

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Yang Yonghui, Tang Zhaohuan, Zhang Zhengyuan, Liu Yong, Wang Zhikuan, Tan Kaizhou, Feng Zhicheng. A novel structure in reducing the on-resistance of a VDMOS[J]. Journal of Semiconductors, 2011, 32(2): 024005. doi: 10.1088/1674-4926/32/2/024005 Yang Y H, Tang Z H, Zhang Z Y, Liu Y, Wang Z K, Tan K Z, Feng Z C. A novel structure in reducing the on-resistance of a VDMOS[J]. J. Semicond., 2011, 32(2): 024005. doi: 10.1088/1674-4926/32/2/024005.Export: BibTex EndNote
      Citation:
      Yang Yonghui, Tang Zhaohuan, Zhang Zhengyuan, Liu Yong, Wang Zhikuan, Tan Kaizhou, Feng Zhicheng. A novel structure in reducing the on-resistance of a VDMOS[J]. Journal of Semiconductors, 2011, 32(2): 024005. doi: 10.1088/1674-4926/32/2/024005

      Yang Y H, Tang Z H, Zhang Z Y, Liu Y, Wang Z K, Tan K Z, Feng Z C. A novel structure in reducing the on-resistance of a VDMOS[J]. J. Semicond., 2011, 32(2): 024005. doi: 10.1088/1674-4926/32/2/024005.
      Export: BibTex EndNote

      A novel structure in reducing the on-resistance of a VDMOS

      doi: 10.1088/1674-4926/32/2/024005
      • Received Date: 2015-08-18
      • Accepted Date: 2010-08-04
      • Revised Date: 2010-09-22
      • Published Date: 2011-01-10

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return