SEMICONDUCTOR DEVICES

Designing of 1 eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell

Haixiao Wang1, Xinhe Zheng1, 2, , Xinyuan Gan1, Naiming Wang1 and Hui Yang1

+ Author Affiliations

 Corresponding author: Xinhe Zheng, Email: xinhezheng@ustb.edu.cn, xhzheng2009@sinano.ac.cn

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Abstract: A reasonably-thick GaNAs/GaInAs superlattice could be an option as a roughly 1 eV subcell to achieve high-efficiency multi-junction solar cells on a lattice-matched Ge substrate. A detailed consideration of a high-efficiency design for a GaInP/GaAs/1 eV/Ge device is presented. Calculations have been done for this structure to obtain the confined energies of the electrons and holes by utilizing the Kronig-Penney model, as well as the absorption coefficient and thereby the external quantum efficiency. The effect of well layers, GaNAs or GaInAs, on the absorption and photocurrent density under the AM 1.5 condition is discussed in order to realize a requirement of current matching in the four-junction solar cells. The management of these considerations implies the feasibility of the GaNAs/GaInAs superlattice subcell design to improve the overall conversion efficiency of lattice matched GaInP/GaAs/1 eV/Ge cells.

Key words: superlatticetheoretical designingsolar cellcurrent match



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图 1.  Schematic of BAC model and bandgap diagram. (a) Schematic band diagram of GaN0:045As. (b) Bandgap of GaNAs and GaInAs as a function of N/In concentration.

Figure 1.


图 2.  Schematic of interband transition in GaNAs/GaInAs superlattice.

Figure 2.


Fig. 3.  Calculated absorption of GaNAs/GaInAs superlattice with GaIn0:30As (GaN0:045As) acting as the well layer respectively.

图 4.  Calculated EQE of GaN0:045As/GaIn0:15As SLSC.

Figure 4.


图 5.  Calculated photocurrent density of GaNAs/GaInAs SLSC with various thicknesses and different In/N concentrations.

Figure 5.


Fig. 6.  Calculated photocurrent of GaN0:045As/GaIn0:15As SLSCs with varying layer thickness and period number.

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    Received: 27 March 2015 Revised: Online: Published: 01 January 2016

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      Haixiao Wang, Xinhe Zheng, Xinyuan Gan, Naiming Wang, Hui Yang. Designing of 1 eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell[J]. Journal of Semiconductors, 2016, 37(1): 014004. doi: 10.1088/1674-4926/37/1/014004 H X Wang, X H Zheng, X Y Gan, N M Wang, H Yang. Designing of 1 eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell[J]. J. Semicond., 2016, 37(1): 014004. doi: 10.1088/1674-4926/37/1/014004.Export: BibTex EndNote
      Citation:
      Haixiao Wang, Xinhe Zheng, Xinyuan Gan, Naiming Wang, Hui Yang. Designing of 1 eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell[J]. Journal of Semiconductors, 2016, 37(1): 014004. doi: 10.1088/1674-4926/37/1/014004

      H X Wang, X H Zheng, X Y Gan, N M Wang, H Yang. Designing of 1 eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell[J]. J. Semicond., 2016, 37(1): 014004. doi: 10.1088/1674-4926/37/1/014004.
      Export: BibTex EndNote

      Designing of 1 eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell

      doi: 10.1088/1674-4926/37/1/014004
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      Project supported by the National Natural Science Foundation of China (No. 61274134) and the International Cooperation Program of Suzhou, China (No. SH201215).

      More Information
      • Corresponding author: Email: xinhezheng@ustb.edu.cn, xhzheng2009@sinano.ac.cn
      • Received Date: 2015-03-27
      • Accepted Date: 2015-06-24
      • Published Date: 2016-01-25

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