Fig. 1.
Reconfigurable dual-band LNA. (a) Switched inductor and switched capacitor type. (b) Tunable matching type
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Xusheng Tang, Fengyi Huang, Youming Zhang, Xin Tang. Reconfigurable dual-band low noise amplifier design and realization[J]. Journal of Semiconductors, 2014, 35(5): 055004. doi: 10.1088/1674-4926/35/5/055004
X S Tang, F Y Huang, Y M Zhang, X Tang. Reconfigurable dual-band low noise amplifier design and realization[J]. J. Semicond., 2014, 35(5): 055004. doi: 10.1088/1674-4926/35/5/055004.
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Reconfigurable dual-band low noise amplifier design and realization
doi: 10.1088/1674-4926/35/5/055004
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Abstract
A reconfigurable dual-band LNA is presented. The LNA employs switching capacitors and circuit in to realize the dual-band operation. These methodologies are used to design and implement a reconfigurable LNA for IMT-A and UWB application. The LNA is implemented using TSMC-0.13 μm CMOS technology. Measured performance shows an input matching of better than -13.5 dB, a voltage gain of 18-22.8 dB, with an NF of 4.3-4.7 dB in the band of 3.4-3.6 GHz, and an input matching of better than -9.7 dB, a voltage gain of 14.7-22.4 dB, and with an NF of 3.7-4.9 dB in the band of 4.2-4.8 GHz. According to the measure results, the proposed LNA achieves dual-band operation, and it proves the feasibility of the proposed topology. -
References
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