| Citation: |
Xu Tianning, Wu Huizhen, Si Jianxiao, Cao Chunfang, Qiu Dongjiang, Dai Ning. Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs[J]. Journal of Semiconductors, 2006, In Press.
Xu T N, Wu H Z, Si J X, Cao C F, Qiu D J, Dai N. Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs[J]. Chin. J. Semicond., 2006, 27(13): 87.
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Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs
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Abstract
PbSe single crystal films are grown on cleaved (111) surface of BaF2 substrate by molecular beam epitaxy.The effects of different Se/PbSe flux ratio (Rf) on morphologies of PbSe films are studied.For PbSe film grown without Se vapor,the surface morphology is characterized by 3D islanding.This feature is changed into triangle holes when low Rf is used,and the dimension of triangle holes decreases as Rf increases.Spirals with monolayer (1ML=0.354nm) steps are observed at Rf=0.6.The diameters in plane of spirals range from 1 to 3μm,and the average step spacing within the spirals is 150nm.The reason for evolution of microstructures on PbSe surface is that the Se vapor has played an important role in the strain relaxation,which can change the growth mode of PbSe films.Finally,we demonstrate the self-organization of PbTe QDs on PbSe buffer layer with the spiral features.The PbTe QDs with two-height distribution are observed.The average heights of the two type PbTe QDs are 11 and 23nm,respectively.-
Keywords:
- PbSe,
- MBE,
- spirals,
- quantum dots
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References
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Proportional views
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