SEMICONDUCTOR DEVICES

Influence of selenium evaporation temperature on the structure of Cu2ZnSnSe4 thin film deposited by a co-evaporation process

Ding Sun, Shengzhi Xu, Li Zhang, Ze Chen, Yang Ge, Ning Wang, Xuejiao Liang, Changchun Wei, Ying Zhao and Xiaodan Zhang

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 Corresponding author: Xiaodan Zhang, E-mail: xdzhang@nankai.edu.cn

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Abstract: Cu2ZnSnSe4 (CZTSe) thin film solar cells have been fabricated using a one-step co-evaporation technique. The structural properties of polycrystalline CZTSe films deposited at different selenium evaporation temperatures (TSe) have been investigated using X-ray diffraction spectra, scanning electron microscopy, and atomic force microscopy. A relationship between TSe and the secondary phases deposited in the initial stage is established to explain the experimental observations. The Se flux is not necessarily increased too much to reduce Sn loss and the consumption of Se during fabrication could also be reduced. The best solar cell, with an efficiency of 2.32%, was obtained at a medium TSe of 230 ℃ (active area 0.34 cm2).

Key words: Cu2ZnSnSe4one-step co-evaporationselenium fluxthin film solar cellsSn loss



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Fig. 1.  Elemental concentrations of Cu, Zn, Sn, and Se of the CZTSe films grown at different Se evaporation temperatures.

Fig. 2.  Preferred orientations of the CZTSe films as a function of Se evaporation temperatures. (a) XRD patterns. (b) Intensity ratios of (112) and (220).

Fig. 3.  SEM images of CZTSe films grown at different Se evaporation temperatures ($T_{\rm Se})$ of (a) 220, (b) 230, (c) 240, and (d) 250 C.

Fig. 4.  XRD patterns of CZTSe films deposited at different Cu evaporation temperatures.

Fig. 5.  AFM images of CZTSe films grown at different Cu evaporation temperatures of (a) 1400, (b) 1420, (c) 1440, and (d) 1460 C.

Fig. 6.  $J$-$V$ characteristics of the CZTSe-based solar cell fabricated at a Se evaporation temperature of 230 C.

Table 1.   Device parameters of CZTSe thin film solar cells with different Se evaporation temperatures.

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    Received: 28 September 2014 Revised: Online: Published: 01 April 2015

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      Ding Sun, Shengzhi Xu, Li Zhang, Ze Chen, Yang Ge, Ning Wang, Xuejiao Liang, Changchun Wei, Ying Zhao, Xiaodan Zhang. Influence of selenium evaporation temperature on the structure of Cu2ZnSnSe4 thin film deposited by a co-evaporation process[J]. Journal of Semiconductors, 2015, 36(4): 044009. doi: 10.1088/1674-4926/36/4/044009 D Sun, S Z Xu, L Zhang, Z Chen, Y Ge, N Wang, X J Liang, C C Wei, Y Zhao, X D Zhang. Influence of selenium evaporation temperature on the structure of Cu2ZnSnSe4 thin film deposited by a co-evaporation process[J]. J. Semicond., 2015, 36(4): 044009. doi: 10.1088/1674-4926/36/4/044009.Export: BibTex EndNote
      Citation:
      Ding Sun, Shengzhi Xu, Li Zhang, Ze Chen, Yang Ge, Ning Wang, Xuejiao Liang, Changchun Wei, Ying Zhao, Xiaodan Zhang. Influence of selenium evaporation temperature on the structure of Cu2ZnSnSe4 thin film deposited by a co-evaporation process[J]. Journal of Semiconductors, 2015, 36(4): 044009. doi: 10.1088/1674-4926/36/4/044009

      D Sun, S Z Xu, L Zhang, Z Chen, Y Ge, N Wang, X J Liang, C C Wei, Y Zhao, X D Zhang. Influence of selenium evaporation temperature on the structure of Cu2ZnSnSe4 thin film deposited by a co-evaporation process[J]. J. Semicond., 2015, 36(4): 044009. doi: 10.1088/1674-4926/36/4/044009.
      Export: BibTex EndNote

      Influence of selenium evaporation temperature on the structure of Cu2ZnSnSe4 thin film deposited by a co-evaporation process

      doi: 10.1088/1674-4926/36/4/044009
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      Project supported by the Specialized Research Fund for the PhD Program of Higher Education (No. 20120031110039).

      More Information
      • Corresponding author: E-mail: xdzhang@nankai.edu.cn
      • Received Date: 2014-09-28
      • Accepted Date: 2014-11-16
      • Published Date: 2015-01-25

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