| Citation: |
Chen Yongsheng, Wang Jianhua, Lu Jingxiao, Yang Gen, Gao Xiaoyong, Yang Shi'e. Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD[J]. Journal of Semiconductors, 2007, In Press.
Chen Y S, Wang J H, Lu J X, Yang G, Gao X Y, Yang S. Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD[J]. Chin. J. Semicond., 2007, 28(7): 1005.
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Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD
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Abstract
The hydrogen plasma degradation of transparent conduction oxides (TCO) is studied for hydrogenated microcrystalline Si(μc-Si:H)prepared by plasma enhanced chemical vapor deposition (PECVD).TCO films such as SnO2 and SnO2/ZnO bi-layer films were exposed to atomic H at various substrate temperatures and for various treatment times.A decrease in the transmittance due to reduction by atomic H was scarcely observed for SnO2/ZnO bi-layer,while a decrease for SnO2 was found to depend strongly on the substrate temperature.The resistivity of SnO2 films decreases significantly when substrate temperature exceeds 150℃ in H-plasma.However,H-plasma treatment has little impact on the resistivity of SnO2/ZnO bi-layer film.The reason for the decrease in the transmittance is the appearance of metallic Sn on the surface,and under this condition no μc-Si:H film is deposited.SnO2/ZnO bi-layer is very effective for the suppression of the reduction of TCO during μc-Si:H deposition.The performance of microcrystalline silicon solar cells fabricated on ZnO/SnO2/glass is also investigated. -
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